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Micromachines
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Thin Film Microelectronic Devices and Circuits, 2nd Edition
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Thin Film Microelectronic Devices and Circuits, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 31 March 2026 | Viewed by 1569

Special Issue Editor

Dr. Chengyuan Dong

E-Mail Website
Guest Editor
Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Interests: thin film electronic devices; active addressing technologies for flat panel displays (FPDs) and nonvolatile memories (NVMs)
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Thin film microelectronic devices and circuits have been garnering more attention as they can be used in many fields of industry, such as semiconductor displays, energy devices, intelligent sensors, and semiconductor memory. In addition, they may be integrated into conventional CMOS integrated circuits and systems, particularly DRAM and flash memory. From a fabrication point of view, thin film microelectronic devices and circuits can be prepared on not only rigid (including glass, wafer, etc.) but also flexible substrates (including polymer, paper, etc.), rendering them potentially suitable for use in some quickly advancing fields, such as the internet of things and medical electronics. This Special Issue plans to provide an overview of the most recent advances in thin film microelectronic devices and circuits in the abovementioned fields. It aims to provide selected contributions to advances in the physics, processing, design, characterization, and applications of novel thin film microelectronic devices and circuits.

Potential topics include, but are not limited to, the following:

  • Thin film transistors;
  • Thin film solar cells;
  • Thin film sensors;
  • Thin film memory;
  • The physics of novel devices;
  • The process development of novel devices;
  • The characterization of novel thin films, devices, and circuits;
  • The design of novel thin film devices and circuits;
  • Pixel circuits for semiconductor displays, sensors, and memory;
  • Active matrix addressing methods for displays, sensors, and memory;
  • Applications of thin film devices and circuits;
  • System-on-glass (SOG) technologies including gate-on-array (GOA) circuits;
  • The integration of thin film devices and CMOS circuits;
  • Hybrid CMOS/TFT process development for semiconductor memory;
  • Hybrid CMOS/TFT circuit design for DRAM and flash memory.

Dr. Chengyuan Dong
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin film electronic devices
  • thin film transistors
  • thin film solar cells
  • thin film sensors
  • thin film memory
  • stability
  • flexibility
  • thin film circuits
  • pixel circuits
  • active matrix addressing
  • systems on glass
  • CMOS technology
  • semiconductor displays
  • intelligent sensors
  • semiconductor memory

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Published Papers (3 papers)

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Research

11 pages, 2480 KB  
Article
In Situ Raman Measurement of the Growth of SiCOH Thin Film Using Hexamethyl-Disiloxane (HMDSO) Mixture Source in Semiconductor Interconnection
by Hwa Rim Lee, Tae Min Choi and Sung Gyu Pyo
Micromachines 2025, 16(11), 1202; https://doi.org/10.3390/mi16111202 - 23 Oct 2025
Viewed by 133
Abstract
This research focuses on the real-time monitoring of SiCOH thin films grown by chemical vapor deposition (CVD) using Raman spectroscopy. To ensure the reliability of CVD-deposited materials in semiconductor processes, the study analyzes the growth and properties of thin films in situ. With [...] Read more.
This research focuses on the real-time monitoring of SiCOH thin films grown by chemical vapor deposition (CVD) using Raman spectroscopy. To ensure the reliability of CVD-deposited materials in semiconductor processes, the study analyzes the growth and properties of thin films in situ. With the increasing demand for low-dielectric constant (low-k) materials due to the miniaturization of semiconductor components, real-time monitoring becomes essential for controlling film thickness, quality, and composition during deposition. Dual laser wavelengths (405 nm and 532 nm) were used to capture Raman spectra and observe changes in film thickness, crystallinity, and the bonding structures of Si-C, Si-OH, and C-C. The results demonstrate that Raman spectroscopy effectively detects real-time molecular changes in thin films, showing a clear correlation between deposition time and film properties such as crystallinity and bond formation. This approach provides valuable insights for optimizing semiconductor thin film processes in real-time. Full article
(This article belongs to the Special Issue Thin Film Microelectronic Devices and Circuits, 2nd Edition)
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8 pages, 2993 KB  
Article
Silver Thin-Film Plated Interconnected Metal Mesh Networks for Virus Detection and Prevention
by Tae Min Choi, Hwa Rim Lee and Sung Gyu Pyo
Micromachines 2025, 16(10), 1177; https://doi.org/10.3390/mi16101177 - 17 Oct 2025
Viewed by 226
Abstract
Many viruses, bacteria, and pollen that cause diseases such as COVID-19 are inhaled by humans as aerosols. Therefore, wearing a mask to block pathogen-containing aerosols is crucial for disease prevention. However, current masks have a drawback—residual bacteria on the mask surface can become [...] Read more.
Many viruses, bacteria, and pollen that cause diseases such as COVID-19 are inhaled by humans as aerosols. Therefore, wearing a mask to block pathogen-containing aerosols is crucial for disease prevention. However, current masks have a drawback—residual bacteria on the mask surface can become aerosolized again, spreading infections. To address this, a reusable mask incorporating the antibacterial properties of silver particles should be developed to suppress the immune response to pathogens and pollen that contact the mask surface. This study analyzed protein surface changes in pollen shells following electroless silver plating on polypropylene (PP) filters of KF94 masks using microcurrent. Pore density increased from 7.94% before microcurrent application to 14.8% and 16.9%, depending on the duration of exposure. These results suggest that microcurrents alter pollen surfaces and affect the proteins in pollen shells that trigger hay fever, confirming the potential for preventing pollen allergies. Full article
(This article belongs to the Special Issue Thin Film Microelectronic Devices and Circuits, 2nd Edition)
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12 pages, 2391 KB  
Article
Structural and Electrically Conductive Properties of Plasma-Enhanced Chemical-Vapor-Deposited High-Resistivity Zn-Doped β-Ga2O3 Thin Films
by Leonid A. Mochalov, Sergey V. Telegin, Aleksei V. Almaev, Ekaterina A. Slapovskaya and Pavel A. Yunin
Micromachines 2025, 16(8), 954; https://doi.org/10.3390/mi16080954 - 19 Aug 2025
Viewed by 1018
Abstract
A method was developed for plasma-enhanced chemical vapor deposition of β-Ga2O3:Zn thin films with the possibility of pre-purifying precursors. The structural and electrically conductive properties of β-Ga2O3:Zn thin films were studied. Increasing the temperature of [...] Read more.
A method was developed for plasma-enhanced chemical vapor deposition of β-Ga2O3:Zn thin films with the possibility of pre-purifying precursors. The structural and electrically conductive properties of β-Ga2O3:Zn thin films were studied. Increasing the temperature of the Zn source (TZn) to 220 °C led to the formation of Ga2O3 films with a Zn concentration of 4 at.%, at TZn = 230 °C [Zn] = 6 at.% and at 235 °C. [Zn] = 8 at.% At TZn = 23 °C, the films corresponded to the β-Ga2O3 phase and were single-crystalline with a surface orientation of (–201). As TZn increased, the polycrystalline structure of β-Ga2O3 films with a predominant orientation of (111) was formed. The introduction of Zn led to the formation of a more developed microrelief of the surface. Raman spectroscopy showed that a small concentration of impurity atoms tended to replace gallium atoms in the oxide lattice, which was also confirmed by the Hall measurements. The concentration of charge carriers upon the introduction of Zn, which is a deep acceptor, decreased by 2–3 orders of magnitude, which mainly determined the decrease in the films’ resistivity. The resulting thin films were promising for the development of high-resistivity areas of β-Ga2O3-based devices. Full article
(This article belongs to the Special Issue Thin Film Microelectronic Devices and Circuits, 2nd Edition)
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