Open AccessArticle
Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation
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Yuedecai Long, Abuduwayiti Aierken, Xuefei Liu, Mingqiang Liu, Changsong Gao, Gang Wang, Degui Wang, Sandip Majumdar, Yundong Xuan, Mengxin Liu and Jinshun Bi
Micromachines 2025, 16(5), 532; https://doi.org/10.3390/mi16050532 (registering DOI) - 29 Apr 2025
Abstract
In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon-germanium heterojunction bipolar transistors on silicon-on-insulator (SiGe-on-SOI HBTs)
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In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon-germanium heterojunction bipolar transistors on silicon-on-insulator (SiGe-on-SOI HBTs) were investigated using TCAD simulations. It was demonstrated that, compared to the bulk SiGe HBT, the SiGe-on-SOI HBT exhibits lower transient current and less charge collection, indicating better resistance to SET. The SET response is more pronounced when heavy ions strike vertically from the emitter and base regions. Transient current and collected charge escalate with increasing incident angle, demonstrating a strong linear correlation with LET values. As the temperature decreases, the peak transient current increases, while the pulse duration decreases and the total collected charge diminishes. After total dose irradiation, the peak transient current in the SiGe-on-SOI HBT decreases, whereas the damage was more severe in the absence of irradiation. Under collector positive bias and positive bias, significant SET responses were observed, while cutoff bias and substrate bias exhibited better resistance to SET damage. These findings provide critical insights into radiation-hardened design strategies for the SiGe-on-SOI HBT.
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