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Microelectronics and Optoelectronic Devices: From Fundamental Research to Advanced Applications, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: 31 July 2025 | Viewed by 1624

Special Issue Editor


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Guest Editor
School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: optoelectronic devices; photodetector; ultrafast spectroscopy; quantum dots; perovskite
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Special Issue Information

Dear Colleagues,

In recent decades, microelectronics and optoelectronics have received widespread attention from academics and industries and have undergone rapid development in terms of both fundamental research and advanced applications, including high-speed information processing in electronics, sensing, display, lighting, energy harvesting, and communication. Microelectronics and optoelectronics devices are the key to future high-tech life, and their fundamental research and advanced applications are closely related. It is vital to enhance basic research in microelectronics and optoelectronics to guide the mass production of applications of integrated devices.

Building on the success of the first edition of this Special Issue, the second edition aims to continue to explore the latest advancements in microelectronic and optoelectronic devices. This volume will highlight new breakthroughs, emerging technologies, and advanced applications while maintaining a strong focus on the fundamental research that drives innovation in this field. We invite the submission of research papers, communications, and review articles on the following key topics:

  • Microelectronic and optoelectronic devices to reveal the underlying physics or mechanisms, as well as cutting-edge applications to present efficient electronic information processing;
  • This research topic spans a broad variety of subjects in microelectronic and optoelectronic devices, including transistors, diodes, memristors, and their integrated devices for microelectronics, as well as photodetectors, light-emitting diodes, lasers, and solar cells for optoelectronics.

This second volume aims to further advance our understanding of microelectronics and optoelectronics and their applications while continuing to highlight the importance of bridging fundamental research with practical, real-world solutions. We look forward to receiving your submissions that will contribute to the ongoing growth of these transformative technologies.

Prof. Dr. Xiao Luo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic devices
  • photodetectors
  • solar cells
  • LED
  • photonic synapses
  • microelectronic devices
  • transistors
  • diodes
  • memristors
  • semiconductor materials

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Related Special Issue

Published Papers (3 papers)

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Research

10 pages, 2040 KiB  
Article
Optical Full Adder Based on Integrated Diffractive Neural Network
by Chenchen Deng, Yilong Wang, Guangpu Li, Jiyuan Zheng, Yu Liu, Chao Wang, Yuyan Wang, Yuchen Guo, Jingtao Fan, Qingyang Du and Shaoliang Yu
Micromachines 2025, 16(6), 681; https://doi.org/10.3390/mi16060681 - 4 Jun 2025
Viewed by 280
Abstract
Light has been intensively investigated as a computing medium due to its high-speed propagation and large operation bandwidth. Since the invention of the first laser in 1960, the development of optical computing technologies has presented both challenges and opportunities. Recent advances in artificial [...] Read more.
Light has been intensively investigated as a computing medium due to its high-speed propagation and large operation bandwidth. Since the invention of the first laser in 1960, the development of optical computing technologies has presented both challenges and opportunities. Recent advances in artificial intelligence over the past decade have opened up new horizons for optical computing applications. This study presents an end-to-end truth table direct mapping approach using on-chip deep diffractive neural network (D2NN) technology to achieve highly parallel optical logic operations. To enable precise logical operations, we propose an on-chip nonlinear solution leveraging the similarity between the hyperbolic tangent (tanh) function and reverse saturable absorption characteristics of quantum dots. We design and demonstrate a 4-bit on-chip D2NN full adder circuit. The simulation results show that the proposed architecture achieves 100% accuracy for 4-bit full adders across the entire dataset. Full article
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16 pages, 28513 KiB  
Article
CMOS Low-Power Optical Transceiver for Short Reach
by Ruixuan Yang, Yiming Dang, Jinhao Chen, Dan Li and Francesco Svelto
Micromachines 2025, 16(5), 587; https://doi.org/10.3390/mi16050587 - 17 May 2025
Viewed by 346
Abstract
The emergence of the AI era driven by Large Language Models (LLMs) and the next-generation high-definition multimedia interface for immersive technologies (AR/VR/metaverse) have created an unprecedented demand for high-bandwidth interconnects. While optical communication systems provide a broad bandwidth, their relatively low power efficiency [...] Read more.
The emergence of the AI era driven by Large Language Models (LLMs) and the next-generation high-definition multimedia interface for immersive technologies (AR/VR/metaverse) have created an unprecedented demand for high-bandwidth interconnects. While optical communication systems provide a broad bandwidth, their relatively low power efficiency continues to limit their deployment in new applications. This work addresses the power efficiency challenges in CMOS optical transceiver design, leveraging the inherent cost and integration advantages of CMOS technology. After outlining the design principles for low-power optical transmitter (Tx) and receiver (Rx) design, we present a comprehensive design of a low-power optical transceiver chipset implemented in 28 nm CMOS. The Tx features a high-impedance asymmetric current-steering output stage with a stacked architecture that facilitates unipolar power supply operation for the efficient anode driving of a common-cathode VCSEL array and achieved a power efficiency of 1.59 pJ/bit. The Rx incorporates a tail-current-controlled Cherry–Hooper-based variable gain amplifier (VGA), which achieved a transimpedance gain that ranged from 68.4 to 78.5 dBΩ and a power efficiency of 1.06 pJ/bit. The Rx–Tx back-to-back measurements confirmed successful data transmission at 4 × 20 Gbps, which demonstrated an overall power efficiency of 2.65 pJ/bit. Full article
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11 pages, 9499 KiB  
Communication
A Complementary Metal-Oxide Semiconductor (CMOS) Analog Optoelectronic Receiver with Digital Slicers for Short-Range Light Detection and Ranging (LiDAR) Systems
by Yunji Song and Sung-Min Park
Micromachines 2025, 16(2), 215; https://doi.org/10.3390/mi16020215 - 13 Feb 2025
Viewed by 751
Abstract
This paper introduces an analog differential optoelectronic receiver (ADOR) integrated with digital slicers for short-range LiDAR systems, consisting of a spatially modulated P+/N-well on-chip avalanche photodiode (APD), a cross-coupled differential transimpedance amplifier (CCD-TIA) with cross-coupled active loads, a continuous-time linear equalizer [...] Read more.
This paper introduces an analog differential optoelectronic receiver (ADOR) integrated with digital slicers for short-range LiDAR systems, consisting of a spatially modulated P+/N-well on-chip avalanche photodiode (APD), a cross-coupled differential transimpedance amplifier (CCD-TIA) with cross-coupled active loads, a continuous-time linear equalizer (CTLE), a limiting amplifier (LA), and dual digital slicers. A key feature is the integration of an additional on-chip dummy APD at the differential input node, which enables the proposed ADOR to outperform a traditional single-ended TIA in terms of common-mode noise rejection ratio. Also, the CCD-TIA utilizes cross-coupled PMOS-NMOS active loads not only to generate the symmetric output waveforms with maximized voltage swings, but also to provide wide bandwidth characteristics. The following CTLE extends the receiver bandwidth further, allowing the dual digital slicers to operate efficiently even at high sampling rates. The LA boosts the output amplitudes to suitable levels for the following slicers. Then, the inverter-based slicers with low power consumption and a small chip area produce digital outputs. The fabricated ADOR chip using a 180 nm CMOS process demonstrates a 20 dB dynamic range from 100 μApp to 1 mApp, 2 Gb/s data rate with a 490 fF APD capacitance, and 22.7 mW power consumption from a 1.8 V supply. Full article
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