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Micromachines
Special Issues
Emerging Trends in Optoelectronic Device Engineering
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Emerging Trends in Optoelectronic Device Engineering

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: 31 October 2025 | Viewed by 734

Special Issue Editors

Dr. Indu Sharma

E-Mail Website
Guest Editor
Department of Materials Science and Engineering and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 61186, Republic of Korea
Interests: two dimensional materials; thin-films, chemical vapor deposition (CV); atomic layer deposition (ALD); heterostructures; interface/bandgap engineering; sensors; solar cells; device fabrication; optoelectronic devices
Dr. MINNAM REDDY VASUDEVA REDDY

E-Mail Website
Guest Editor
School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
Interests: solar cells; photoelectrochemical cells; schottky diodes; photocatalysis; thin films; nanomaterials; physical properties

Special Issue Information

Dear Colleagues,

The field of optoelectronic device engineering is currently experiencing rapid evolution, driven by continuous advancements in materials, fabrication techniques, and diverse application domains. This Special Issue aims to comprehensively explore and showcase the latest breakthroughs and emerging trends that are shaping the landscape of optoelectronics. Recent developments span a broad spectrum of topics, encompassing novel materials such as quantum dots and nanomaterials, innovative fabrication methods aimed at enhancing the performance and scalability, and integration with cutting-edge technologies like artificial intelligence and the Internet of Things (IoT). Researchers are pushing the boundaries in ultrafast photonics for high-speed communication systems, advancing both organic and inorganic optoelectronic materials, and exploring diverse applications in biomedical imaging, environmental monitoring, and renewable energy solutions.

The Special Issue invites contributions from researchers and experts in the field, welcoming original research articles, comprehensive reviews, insightful perspectives, and innovative ideas. These contributions will highlight the recent progress and will forecast future directions in optoelectronic device engineering, fostering collaboration, inspiring new insights, and propelling the field towards transformative advancements. By bringing together diverse perspectives and cutting-edge research, this Special Issue aims to serve as a pivotal platform for exchanging knowledge and shaping the future of optoelectronic technologies. We believe that, through this collaboration, we can collectively address challenges and leverage opportunities to accelerate the development and deployment of next-generation optoelectronic devices.

We look forward to receiving your valuable contributions to this engaging Special Issue.

Dr. Indu Sharma
Dr. MINNAM REDDY VASUDEVA REDDY
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics
  • 2D materials
  • thin films
  • semiconducting materials
  • quantum dots
  • photoluminescence
  • bandgap engineering
  • photovoltaics
  • optical sensors
  • light emitting diodes (lEds)
  • solar cells
  • photodetectors
  • photoelectrochemical
  • water splitting

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Published Papers (1 paper)

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Research

11 pages, 15832 KiB  
Article
A Pathway for the Integration of Novel Ferroelectric Thin Films on Non-Planar Photonic Integrated Circuits
by Enes Lievens, Kobe De Geest, Ewout Picavet, Liesbet Van Landschoot, Henk Vrielinck, Gilles Freddy Feutmba, Hannes Rijckaert, Klaartje De Buysser, Dries Van Thourhout, Peter Bienstman and Jeroen Beeckman
Micromachines 2025, 16(3), 334; https://doi.org/10.3390/mi16030334 - 13 Mar 2025
Viewed by 27
Abstract
The heterogeneous integration of ferroelectric thin films on silicon- or silicon nitride-based platforms for photonic integrated circuits plays a crucial role in the development of nanophotonic thin film modulators. For this purpose, an ultrathin seed film was recently introduced as an integration method [...] Read more.
The heterogeneous integration of ferroelectric thin films on silicon- or silicon nitride-based platforms for photonic integrated circuits plays a crucial role in the development of nanophotonic thin film modulators. For this purpose, an ultrathin seed film was recently introduced as an integration method for ferroelectric thin films such as BaTiO3 and Pb(Zr,Ti)O3. One issue with this self-orienting seed film is that for non-planarized circuits, it fails to act as a template film for the thin films. To circumvent this problem, we propose a method of planarization without the need for wafer-scale chemical mechanical polishing by using hydrogen silsesquioxane as a precursor to forming amorphous silica, in order to create an oxide cladding similar to the thermal oxide often present on silicon-based platforms. Additionally, this oxide cladding is compatible with the high annealing temperatures usually required for the deposition of these novel ferroelectric thin films (600–800 °C). The thickness of this silica film can be controlled through a dry etch process, giving rise to a versatile platform for integrating nanophotonic thin film modulators on a wider variety of substrates. Using this method, we successfully demonstrate a hybrid BaTiO3-Si ring modulator with a high Pockels coefficient of rwg=155.57±10.91 pm V−1 and a half-wave voltage-length product of VπL=2.638±0.084 V cm, confirming the integration of ferroelectric thin films on an initially non-planar substrate. Full article
(This article belongs to the Special Issue Emerging Trends in Optoelectronic Device Engineering)
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