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27 Results Found

  • Article
  • Open Access
7 Citations
3,182 Views
10 Pages

Timing Performance Simulation for 3D 4H-SiC Detector

  • Yuhang Tan,
  • Tao Yang,
  • Kai Liu,
  • Congcong Wang,
  • Xiyuan Zhang,
  • Mei Zhao,
  • Xiaochuan Xia,
  • Hongwei Liang,
  • Ruiliang Xu and
  • Yu Zhao
  • + 7 authors

28 December 2021

To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because...

  • Article
  • Open Access
6 Citations
3,525 Views
13 Pages

26 April 2020

Carbon nanotubes (CNTs)-based sensors have gained significant importance due to their tremendous electrical and physical attributes. CNT-based gas sensors have high sensitivity, stability, and fast response time compared to that of solid-state sensor...

  • Article
  • Open Access
55 Citations
6,523 Views
27 Pages

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

  • Krishna C. Mandal,
  • Joshua W. Kleppinger and
  • Sandeep K. Chaudhuri

28 February 2020

Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolin...

  • Article
  • Open Access
11 Citations
2,604 Views
9 Pages

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector

  • Antonella Sciuto,
  • Lucia Calcagno,
  • Salvatore Di Franco,
  • Domenico Pellegrino,
  • Lorenzo Maurizio Selgi and
  • Giuseppe D’Arrigo

30 December 2021

4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He+ in the fluence range of 5 × 1011 ÷ 5 × 1014 ion/cm2 in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were mon...

  • Article
  • Open Access
19 Citations
5,475 Views
11 Pages

Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

  • Alessandro Meli,
  • Annamaria Muoio,
  • Antonio Trotta,
  • Laura Meda,
  • Miriam Parisi and
  • Francesco La Via

19 February 2021

The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of a device for neutron detection as an alternative material to diamond detectors used in this field. We have studied a high growth rate process to grow a...

  • Article
  • Open Access
1 Citations
994 Views
14 Pages

Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector

  • Alfio Samuele Mancuso,
  • Enrico Sangregorio,
  • Annamaria Muoio,
  • Saverio De Luca,
  • Matteo Hakeem Kushoro,
  • Erik Gallo,
  • Silvia Vanellone,
  • Eleonora Quadrivi,
  • Antonio Trotta and
  • Lucia Calcagno
  • + 1 author

22 May 2025

The objective of the proposed work was to investigate the electrical performance of a 250 µm-thick 4H-SiC p-n junction detector after irradiation with DT neutrons (14.1 MeV energy) at high temperature (500 °C). The results showed that the c...

  • Article
  • Open Access
20 Citations
4,744 Views
13 Pages

Response of 4H-SiC Detectors to Ionizing Particles

  • Robert Bernat,
  • Ivana Capan,
  • Luka Bakrač,
  • Tomislav Brodar,
  • Takahiro Makino,
  • Takeshi Ohshima,
  • Željko Pastuović and
  • Adam Sarbutt

24 December 2020

We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm2), while all detector...

  • Review
  • Open Access
164 Views
35 Pages

Advances in High-Temperature Irradiation-Resistant Neutron Detectors

  • Chunyuan Wang,
  • Ren Yu,
  • Wenming Xia and
  • Junjun Gong

12 December 2025

To achieve a substantial enhancement in thermodynamic efficiency, Generation IV nuclear reactors are designed to operate at significantly elevated temperatures compared to conventional reactors. Moreover, they typically employ a fast neutron spectrum...

  • Review
  • Open Access
40 Citations
7,910 Views
12 Pages

10 February 2022

In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) s...

  • Article
  • Open Access
5 Citations
2,204 Views
13 Pages

30 July 2023

Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequate...

  • Article
  • Open Access
24 Citations
7,841 Views
9 Pages

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

  • Lin-Yue Liu,
  • Ling Wang,
  • Peng Jin,
  • Jin-Liang Liu,
  • Xian-Peng Zhang,
  • Liang Chen,
  • Jiang-Fu Zhang,
  • Xiao-Ping Ouyang,
  • Ao Liu and
  • Run-Hua Huang
  • + 1 author

13 October 2017

Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-...

  • Article
  • Open Access
311 Views
16 Pages

Extraction of Electron and Hole Drift Velocities in Thin 4H-SiC PIN Detectors Using High-Frequency Readout Electronics

  • Andreas Gsponer,
  • Sebastian Onder,
  • Stefan Gundacker,
  • Jürgen Burin,
  • Matthias Knopf,
  • Daniel Radmanovac,
  • Simon Waid and
  • Thomas Bergauer

25 November 2025

Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide bandgap makes it an interesting candi...

  • Article
  • Open Access
55 Citations
5,496 Views
12 Pages

Silicon Carbide Microstrip Radiation Detectors

  • Donatella Puglisi and
  • Giuseppe Bertuccio

30 November 2019

Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at...

  • Article
  • Open Access
15 Citations
4,259 Views
13 Pages

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

  • Guixia Yang,
  • Yuanlong Pang,
  • Yuqing Yang,
  • Jianyong Liu,
  • Shuming Peng,
  • Gang Chen,
  • Ming Jiang,
  • Xiaotao Zu,
  • Xuan Fang and
  • Hongbin Zhao
  • + 2 authors

2 February 2019

Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understoo...

  • Article
  • Open Access
11 Citations
3,492 Views
10 Pages

4H-SiC Schottky Barrier Diodes for Efficient Thermal Neutron Detection

  • Robert Bernat,
  • Luka Bakrač,
  • Vladimir Radulović,
  • Luka Snoj,
  • Takahiro Makino,
  • Takeshi Ohshima,
  • Željko Pastuović and
  • Ivana Capan

6 September 2021

In this work, we present the improved efficiency of 4H-SiC Schottky barrier diodes-based detectors equipped with the thermal neutron converters. This is achieved by optimizing the thermal neutron converter thicknesses. Simulations of the optimal thic...

  • Review
  • Open Access
75 Citations
13,363 Views
37 Pages

Emerging SiC Applications beyond Power Electronic Devices

  • Francesco La Via,
  • Daniel Alquier,
  • Filippo Giannazzo,
  • Tsunenobu Kimoto,
  • Philip Neudeck,
  • Haiyan Ou,
  • Alberto Roncaglia,
  • Stephen E. Saddow and
  • Salvatore Tudisco

6 June 2023

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solv...

  • Article
  • Open Access
2 Citations
2,125 Views
11 Pages

10 May 2023

The exceptional optoelectronic properties and high radiation resistance of epitaxial silicon carbide make this material attractive for high-energy beam dosimetry and radiation monitoring, especially when strict requirements such as high signal-to-noi...

  • Article
  • Open Access
12 Citations
2,986 Views
10 Pages

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

  • Xiaomeng Li,
  • Xiufang Chen,
  • Xiangang Xu,
  • Xiaobo Hu and
  • Zhiyuan Zuo

2 October 2019

The excellent optoelectronic properties of graphene give it great potential for applications in optical detection. Among the graphenes obtained through many synthetic methods, epitaxial graphene obtained by thermal decomposition on silicon carbide ha...

  • Feature Paper
  • Article
  • Open Access
6 Citations
5,724 Views
10 Pages

The simple and simultaneous determination of silicic, boric and carbonic acids was made using ion-exclusion chromatography (IEC) and a Corona™ charged aerosol detector (C-CAD). Silicic and boric acids were separated by the column packed with a weakly...

  • Article
  • Open Access
20 Citations
4,145 Views
8 Pages

A Novel Route to High-Quality Graphene Quantum Dots by Hydrogen-Assisted Pyrolysis of Silicon Carbide

  • Na Eun Lee,
  • Sang Yoon Lee,
  • Hyung San Lim,
  • Sung Ho Yoo and
  • Sung Oh Cho

6 February 2020

Graphene quantum dots (GQDs) can be highly beneficial in various fields due to their unique properties, such as having an effective charge transfer and quantum confinement. However, defects on GQDs hinder these properties, and only a few studies have...

  • Article
  • Open Access
1 Citations
1,724 Views
17 Pages

Aluminum–Silica Core–Shell Nanoparticles via Nonthermal Plasma Synthesis

  • Thomas Cameron,
  • Bailey Klause,
  • Kristine Q. Loh and
  • Uwe R. Kortshagen

4 February 2025

Aluminum nanoparticles (Al NPs) are interesting for energetic and plasmonic applications due to their enhanced size-dependent properties. Passivating the surface of these particles is necessary to avoid forming a native oxide layer, which can degrade...

  • Article
  • Open Access
3,800 Views
16 Pages

A Sensor Employing an Array of Silicon Photomultipliers for Detection of keV Ions in Time-of-Flight Mass Spectrometry

  • Antonio Mariscal-Castilla,
  • Markus Piller,
  • Jerome Alozy,
  • Rafael Ballabriga,
  • Michael Campbell,
  • Oscar de la Torre,
  • David Gascón,
  • Sergio Gómez,
  • David Heathcote and
  • Joan Mauricio
  • + 4 authors

5 March 2025

Pixellated scintillation detectors have the potential to overcome several limitations of conventional microchannel-plate-based detectors employed in time-of-flight mass spectrometry (ToF-MS), such as extending detector lifetime, reducing vacuum requi...

  • Article
  • Open Access
12 Citations
13,939 Views
10 Pages

Real Time Monitoring of Temperature of a Micro Proton Exchange Membrane Fuel Cell

  • Chi-Yuan Lee,
  • Shuo-Jen Lee,
  • Yuh-Chung Hu,
  • Wen-Pin Shih,
  • Wei-Yuan Fan and
  • Chih-Wei Chuang

3 March 2009

Silicon micro-hole arrays (Si-MHA) were fabricated as a gas diffusion layer (GDL) in a micro fuel cell using the micro-electro-mechanical-systems (MEMS) fabrication technique. The resistance temperature detector (RTD) sensor was integrated with the G...

  • Proceeding Paper
  • Open Access
4 Citations
3,592 Views
4 Pages

Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection

  • Robert Sokolovskij,
  • Elina Iervolino,
  • Changhui Zhao,
  • Fabio Santagata,
  • Fei Wang,
  • Hongyu Yu,
  • Pasqualina M. Sarro and
  • Guo Qi Zhang

AlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those...

  • Article
  • Open Access
14 Citations
4,475 Views
17 Pages

The UV Effect on the Chemiresistive Response of ZnO Nanostructures to Isopropanol and Benzene at PPM Concentrations in Mixture with Dry and Wet Air

  • Maksim A. Solomatin,
  • Olga E. Glukhova,
  • Fedor S. Fedorov,
  • Martin Sommer,
  • Vladislav V. Shunaev,
  • Alexey S. Varezhnikov,
  • Albert G. Nasibulin,
  • Nikolay M. Ushakov and
  • Victor V. Sysoev

Towards the development of low-power miniature gas detectors, there is a high interest in the research of light-activated metal oxide gas sensors capable to operate at room temperature (RT). Herein, we study ZnO nanostructures grown by the electroche...

  • Article
  • Open Access
1,061 Views
16 Pages

High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering

  • Junting Zhang,
  • Jiexin Chen,
  • Shuojia Zheng,
  • Da Zhang,
  • Shaojuan Luo and
  • Huixia Luo

17 April 2025

Two-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects....

  • Article
  • Open Access

17 December 2025

Financial fraud detection is critical to modern economic security, yet remains challenging due to collusive group behavior, temporal drift, and severe class imbalance. Most existing graph neural network (GNN) detectors rely on pairwise edges and corr...