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Nanomaterials 2019, 9(2), 194; https://doi.org/10.3390/nano9020194

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

1
Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, P.O. Box 919-220, Mianyang 621900, China
2
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronics, Nanjing 210000, China
3
School of Physical, University of Electronic Science and Technology of China, Chengdu 610054, China
4
School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
5
State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China
*
Authors to whom correspondence should be addressed.
Received: 31 December 2018 / Revised: 15 January 2019 / Accepted: 28 January 2019 / Published: 2 February 2019
(This article belongs to the Special Issue Advances in Emerging Solar Cells)
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Abstract

Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field are generally focused on electrical properties and defects formation, which are not suitable to explain the intrinsic response of irradiation effect since defect itself is not easy to characterize, and it is complex to determine whether it comes from the raw material or exists only upon irradiation. Therefore, a more straightforward quantification of irradiation effect is needed to establish the direct correlation between irradiation-induced current and the radiation fluence. This work reports the on-line electrical properties of 4H-SiC Schottky barrier diodes (SBDs) under high-dose electron irradiation and employs in situ noise diagnostic analysis to demonstrate the correlation of irradiation-induced defects and microscopic electronic properties. It is found that the electron beam has a strong radiation destructive effect on 4H-SiC SBDs. The on-line electron-induced current and noise information reveal a self-healing like procedure, in which the internal defects of the devices are likely to be annealed at room temperature and devices’ performance is restored to some extent. View Full-Text
Keywords: electron irradiation; room temperature self-healing; noise; electron-induced current; I–V curve electron irradiation; room temperature self-healing; noise; electron-induced current; I–V curve
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Yang, G.; Pang, Y.; Yang, Y.; Liu, J.; Peng, S.; Chen, G.; Jiang, M.; Zu, X.; Fang, X.; Zhao, H.; Qiao, L.; Xiao, H. High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes. Nanomaterials 2019, 9, 194.

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