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Open AccessArticle

Response of 4H-SiC Detectors to Ionizing Particles

1
Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia
2
National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki 370-1292, Japan
3
Australian Nuclear Science and Technology Organisation, 1 New Illawarra Rd., Lucas Heights, NSW 2234, Australia
*
Author to whom correspondence should be addressed.
Crystals 2021, 11(1), 10; https://doi.org/10.3390/cryst11010010
Received: 4 December 2020 / Revised: 19 December 2020 / Accepted: 22 December 2020 / Published: 24 December 2020
(This article belongs to the Special Issue Crystalline Materials for Radiation Detection: A New Perspectives)
We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm2), while all detectors had the same 4H-SiC epi-layer thickness of approximately µm, sufficient to stop alpha particles up to 6.8 MeV, which have been used in this study. The detector response to the various alpha emitters in the 3.27 MeV to 8.79 MeV energy range clearly demonstrates the excellent linear response to alpha emissions of the detectors with the increasing active area. The detector response in gamma radiation field of Co-60 and Cs-137 sources showed a linear response to air kerma and to different air kerma rates as well, up to 4.49 Gy/h. The detector response is not in saturation for the dose rates lower than 15.3 mGy/min and that its measuring range for gamma radiation with energies of 662 keV, 1.17 MeV and 1.33 MeV is from 0.5 mGy/h–917 mGy/h. No changes to electrical properties of pristine and tested 4H-SiC SBD detectors, supported by a negligible change in carbon vacancy defect density and no creation of other deep levels, demonstrates the radiation hardness of these 4H-SiC detectors. View Full-Text
Keywords: silicon carbide; radiation detector; radiation response; alpha particles; gamma radiation silicon carbide; radiation detector; radiation response; alpha particles; gamma radiation
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MDPI and ACS Style

Bernat, R.; Capan, I.; Bakrač, L.; Brodar, T.; Makino, T.; Ohshima, T.; Pastuović, Ž.; Sarbutt, A. Response of 4H-SiC Detectors to Ionizing Particles. Crystals 2021, 11, 10. https://doi.org/10.3390/cryst11010010

AMA Style

Bernat R, Capan I, Bakrač L, Brodar T, Makino T, Ohshima T, Pastuović Ž, Sarbutt A. Response of 4H-SiC Detectors to Ionizing Particles. Crystals. 2021; 11(1):10. https://doi.org/10.3390/cryst11010010

Chicago/Turabian Style

Bernat, Robert; Capan, Ivana; Bakrač, Luka; Brodar, Tomislav; Makino, Takahiro; Ohshima, Takeshi; Pastuović, Željko; Sarbutt, Adam. 2021. "Response of 4H-SiC Detectors to Ionizing Particles" Crystals 11, no. 1: 10. https://doi.org/10.3390/cryst11010010

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