Next Article in Journal
Etched Polymer Fibre Bragg Gratings and Their Biomedical Sensing Applications
Next Article in Special Issue
A High-Temperature MEMS Surface Fence for Wall-Shear-Stress Measurement in Scramjet Flow
Previous Article in Journal
Verification of a Method for Measuring Parkinson’s Disease Related Temporal Irregularity in Spiral Drawings
Previous Article in Special Issue
Autonomous Microsystems for Downhole Applications: Design Challenges, Current State, and Initial Test Results
Article Menu
Issue 10 (October) cover image

Export Article

Open AccessArticle
Sensors 2017, 17(10), 2334;

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

School of Nuclear Science and Technology, Xi’an Jiaotong University, No. 28, Xianning West Road, Xi’an 710049, China
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, No. 524 East Zhongshan Road, Nanjing 210016, China
Shaanxi Engineering Research Center for Pulse-Neutron Source and its Application, Xijing University, Xi’an 710123, China
Authors to whom correspondence should be addressed.
Received: 16 July 2017 / Revised: 23 September 2017 / Accepted: 25 September 2017 / Published: 13 October 2017
(This article belongs to the Special Issue Sensors and Materials for Harsh Environments)
Full-Text   |   PDF [4851 KB, uploaded 13 October 2017]   |  


Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments. View Full-Text
Keywords: 4H-SiC; radiation detection; large sensitive area; Schottky diode 4H-SiC; radiation detection; large sensitive area; Schottky diode

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Liu, L.-Y.; Wang, L.; Jin, P.; Liu, J.-L.; Zhang, X.-P.; Chen, L.; Zhang, J.-F.; Ouyang, X.-P.; Liu, A.; Huang, R.-H.; Bai, S. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2. Sensors 2017, 17, 2334.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top