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Open AccessArticle

A Novel Route to High-Quality Graphene Quantum Dots by Hydrogen-Assisted Pyrolysis of Silicon Carbide

Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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Nanomaterials 2020, 10(2), 277; https://doi.org/10.3390/nano10020277
Received: 17 January 2020 / Revised: 29 January 2020 / Accepted: 2 February 2020 / Published: 6 February 2020
(This article belongs to the Special Issue Nanocarbon Based Materials)
Graphene quantum dots (GQDs) can be highly beneficial in various fields due to their unique properties, such as having an effective charge transfer and quantum confinement. However, defects on GQDs hinder these properties, and only a few studies have reported fabricating high-quality GQDs with high crystallinity and few impurities. In this study, we present a novel yet simple approach to synthesizing high-quality GQDs that involves annealing silicon carbide (SiC) under low vacuum while introducing hydrogen (H) etching gas; no harmful chemicals are required in the process. The fabricated GQDs are composed of a few graphene layers and possess high crystallinity, few defects and high purity, while being free from oxygen functional groups. The edges of the GQDs are hydrogen-terminated. High-quality GQDs form on the etched SiC when the etching rates of Si and C atoms are monitored. The size of the fabricated GQDs and the surface morphology of SiC can be altered by changing the operating conditions. Collectively, a novel route to high-quality GQDs will be highly applicable in fields involving sensors and detectors. View Full-Text
Keywords: graphene quantum dots; silicon carbide; hydrogen-assisted pyrolysis; high-quality graphene quantum dots; silicon carbide; hydrogen-assisted pyrolysis; high-quality
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MDPI and ACS Style

Lee, N.E.; Lee, S.Y.; Lim, H.S.; Yoo, S.H.; Cho, S.O. A Novel Route to High-Quality Graphene Quantum Dots by Hydrogen-Assisted Pyrolysis of Silicon Carbide. Nanomaterials 2020, 10, 277.

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