Table of Contents
Electronics, Volume 9, Issue 10 (October 2020) – 192 articles
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Cover Story (view full-size image) This paper presents a methodology to design a wideband radio frequency variable gain amplifier [...] Read more. This paper presents a methodology to design a wideband radio frequency variable gain amplifier (RF–VGA) in a low-cost SiGe BiCMOS 0.35 µm process. The circuit uses two amplifiers based on second-generation controlled current conveyors (CCCII). The main feature of this circuit is its wideband input match with a reduced NF (5.5–9.6 dB), without passive elements and, to the authors' knowledge, the lowest die footprint reported (62x44 µm2). Due to the nature of the circuit, when the gain is increased the power consumption is reduced. The architecture is suitable for designing wideband, low-power, and low-noise amplifiers. The design achieves a tunable gain of 6.7–18 dB and power consumption of 1.7 mA with a ±1.5 V DC supply. At maximum gain, the proposed RF-VGA covers from DC up to 1 GHz. View this paper