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Article

Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics

1
School of Microelectronics, Shandong University, Jinan 250100, China
2
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Shijiazhuang 050051, China
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(10), 1719; https://doi.org/10.3390/electronics9101719
Received: 3 September 2020 / Revised: 8 October 2020 / Accepted: 13 October 2020 / Published: 19 October 2020
A physics-based model for the output current–voltage (I–V) characteristics of AlGaN/GaN HFETs is developed based on AlGaAs/GaAs HFETs. It is demonstrated that Polarization Coulomb Field (PCF) scattering greatly influences channel electron mobility. With different gate biases, channel electron mobility is varied by PCF scattering. Furthermore, a more negative gate bias and a lower ratio of lg/lsd (gate length/source-drain space) of the device causes the PCF scattering to have stronger influence on channel electron mobility. This work is the first to apply PCF scattering to a physics-based model for AlGaN/GaN HFETs with I–V characteristics and the results indicate that PCF scattering is essential for a physics-based model to identify I–V characteristics of AlGaN/GaN HFETs. View Full-Text
Keywords: AlGaN/GaN HFETs; physics-based model; compact; the PCF scattering; low field carrier mobility AlGaN/GaN HFETs; physics-based model; compact; the PCF scattering; low field carrier mobility
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MDPI and ACS Style

Yang, Y.; Lv, Y.; Lin, Z.; Jiang, G.; Liu, Y. Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics. Electronics 2020, 9, 1719. https://doi.org/10.3390/electronics9101719

AMA Style

Yang Y, Lv Y, Lin Z, Jiang G, Liu Y. Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics. Electronics. 2020; 9(10):1719. https://doi.org/10.3390/electronics9101719

Chicago/Turabian Style

Yang, Yongxiong, Yuanjie Lv, Zhaojun Lin, Guangyuan Jiang, and Yang Liu. 2020. "Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics" Electronics 9, no. 10: 1719. https://doi.org/10.3390/electronics9101719

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