Open AccessArticle
Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films
by
Chun-Min Wang 1, Chun-Chieh Huang 2,*, Jui-Chao Kuo 1,†, Dipti Ranjan Sahu 3,† and Jow-Lay Huang 1,4,5,6,†
1
Department of Materials Science and Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, Taiwan
2
Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan
3
Amity Institute of Nanotechnology, Amity University, Sector 125, Noida, India
4
Department of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Road, Nan-Tzu District, Kaohsiung 811, Taiwan
5
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan
6
Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan
†
These authors contributed equally to this work.
Cited by 12 | Viewed by 7266
Abstract
Tin oxide (SnO
2—x) thin films were prepared under various flow ratios of O
2/(O
2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O
[...] Read more.
Tin oxide (SnO
2—x) thin films were prepared under various flow ratios of O
2/(O
2 + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O
2/(O
2 + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO
2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.
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