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Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

Department of Electronic Engineering, National United University, No. 1, Lienda, Miaoli 36003, Taiwan
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Academic Editor: Jung Ho Je
Materials 2015, 8(8), 5112-5120; https://doi.org/10.3390/ma8085112
Received: 11 June 2015 / Revised: 3 August 2015 / Accepted: 5 August 2015 / Published: 7 August 2015
(This article belongs to the Section Structure Analysis and Characterization)
This paper presents a novel TaN-Al2O3-HfSiOx-SiO2-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiOx/SiO2 interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 103 P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM. View Full-Text
Keywords: TaN-Al2O3-HfSiOx-SiO2-Silicon (TAHOS); nonvolatile memory (NVM); dipole engineering; work function TaN-Al2O3-HfSiOx-SiO2-Silicon (TAHOS); nonvolatile memory (NVM); dipole engineering; work function
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Lin, Y.-H.; Yang, Y.-Y. Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory. Materials 2015, 8, 5112-5120.

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