Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory
Abstract
:1. Introduction
2. Experimental Section
Dipole engineering | w/o Dipole | w/i Dipole Al2O3 | w/i Dipole HfO2 |
---|---|---|---|
Tunneling oxide | SiO2 40 Å | SiO2 40 Å | SiO2 40 Å |
Dipole layer | – | Al2O3 10 Å | HfO2 10 Å |
Trapping layer | HfSiOx 100 Å | HfSiOx 100 Å | HfSiOx 100 Å |
Blocking oxide | Al2O3 100 Å | Al2O3 100 Å | Al2O3 100 Å |
3. Results and Discussion
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Lin, Y.-H.; Yang, Y.-Y. Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory. Materials 2015, 8, 5112-5120. https://doi.org/10.3390/ma8085112
Lin Y-H, Yang Y-Y. Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory. Materials. 2015; 8(8):5112-5120. https://doi.org/10.3390/ma8085112
Chicago/Turabian StyleLin, Yu-Hsien, and Yi-Yun Yang. 2015. "Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory" Materials 8, no. 8: 5112-5120. https://doi.org/10.3390/ma8085112