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Open AccessArticle

Capacitive Behavior of Single Gallium Oxide Nanobelt

by Haitao Cai 1,✝, Hang Liu 1,✝, Huichao Zhu 1,*, Pai Shao 1 and Changmin Hou 2,*
School of Electronic Science and Technology, Key Laboratory for Integrated Circuits Technology of Liaoning Province, Dalian University of Technology, Dalian 116024, China
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
Authors to whom correspondence should be addressed.
These authors contributed equally to this work.
Academic Editor: Teen-Hang Meen
Materials 2015, 8(8), 5313-5320;
Received: 4 June 2015 / Revised: 22 July 2015 / Accepted: 5 August 2015 / Published: 17 August 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure. View Full-Text
Keywords: Ga2O3; nanobelt; capacitive behavior; impedance analysis Ga2O3; nanobelt; capacitive behavior; impedance analysis
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Cai, H.; Liu, H.; Zhu, H.; Shao, P.; Hou, C. Capacitive Behavior of Single Gallium Oxide Nanobelt. Materials 2015, 8, 5313-5320.

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