A self-powered photodetector with the FTO/
n-TiO
2/
p-CuMnO
2 configuration, representing the novelty of the work, was successfully achieved for the first time and presumes two steps: deposition of the
n-type semiconductor (TiO
2) by the doctor
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A self-powered photodetector with the FTO/
n-TiO
2/
p-CuMnO
2 configuration, representing the novelty of the work, was successfully achieved for the first time and presumes two steps: deposition of the
n-type semiconductor (TiO
2) by the doctor blade method and of the
p-type semiconductor (CuMnO
2) by the spin coating technique, respectively. Investigation techniques of the structural and morphological characteristics of the as-synthesized heterostructures, such as XRD, UV-VIS analysis, and SEM/EDX and AFM morphologies, were used. The
I-t measurements of the photodetector showed that the responsivity in the self-powered mode was 2.84 × 10
7 A W
−1 cm
2 and in the 1 V bias mode it was 1.82 × 10
6 A W
−1 cm
2. Additionally, a self-powered current of 14.2 nA was generated under UV illumination with an intensity of 0.1 mW/cm
2. Furthermore, under illumination conditions, the response time (t
res) and the recovery time (t
rec) of the sensor exhibited a good response; thus, t
res = 7.30 s and t
rec = 0.4 s for the self-powered mode, and in the 1 V bias mode, these were t
res = 15.16 s and t
rec = 2.18 s. The above results show that the transparent heterojunction device of
n-TiO
2/
p-CuMnO
2 exhibited a self-powered ultraviolet photodetector with high sensitivity.
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