Wide-Bandgap (WBG) Semiconductors: Advancements in Synthesis, Surface Engineering and Applications

Dear Colleagues,

Wide-bandgap (WBG) semiconductors—including gallium oxide (Ga₂O₃), diamond, and aluminum nitride (AlN)—are pivotal to next-generation high-performance electronics, enabling breakthroughs in power conversion, RF communication, deep-ultraviolet (DUV) optoelectronics, and extreme-environment sensing. Their exceptional properties—wide bandgaps (>3 eV), ultrahigh breakdown fields (>3 MV/cm for Ga₂O₃, >10 MV/cm for diamond), superior thermal conductivity (diamond: ~2000 W/m·K, AlN: ~170–285 W/m·K), and radiation robustness—address critical limitations of silicon and III-V semiconductors. However, translating their potential into scalable applications hinges on mastering three interlinked frontiers: advanced material synthesis, precision surface engineering, and high-performance device realization.

This Special Issue of Electronics focuses on recent progress and remaining challenges in WBG semiconductors research, with a dedicated emphasis on synthesis methodologies, surface processing techniques, and device-level performance optimization. We invite original research articles, in-depth reviews, and perspective papers that bridge fundamental materials science with engineering practice, particularly those addressing scalability, reliability, and functional integration.

Key Topics of Interest:

1. Material Synthesis and Epitaxial Growth:

• Novel growth techniques for WBG semiconductors;
• Defect control during growth;
• Heteroepitaxy and lattice matching.

2. Surface Processing and Interface Engineering:

• Advanced cleaning and passivation;
• Nanostructuring and etching;
• Surface functionalization.

3. Device Performance and Reliability:

• Power electronics;
• RF and microwave devices;
• Optoelectronics and sensors;
• Reliability and degradation mechanisms.

Broader Scope (Complementary Themes):

• Theoretical modeling;
• Scalable fabrication;
• Cross-cutting applications.

We warmly welcome contributions from both academic pioneers and industry leaders—whether you are advancing synthesis throughput, solving surface-related yield issues, or demonstrating record-breaking device metrics. By sharing your insights, you will accelerate the transition of WBG semiconductors from lab-scale innovation to market-ready technologies, reshaping global energy, communication, and sensing landscapes.

Submit your work now to define the future of wide-bandgap semiconductors—where material mastery meets device excellence.

You may choose our Joint Special Issue in Molecules.

Dr. Wei Hu
Guest Editor

Manuscript Submission Information

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