Wide-Bandgap (WBG) Semiconductors: Advancements in Synthesis, Surface Engineering, and Applications
A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Applied Chemistry".
Deadline for manuscript submissions: 31 May 2026
Special Issue Editor
Interests: optoelectronic devices; semiconductor devices and physics; flexible electronics; biosensor
Special Issue Information
Dear Colleagues,
Wide-bandgap (WBG) semiconductors—including gallium oxide (Ga2O3), diamond, and aluminum nitride (AlN)—are pivotal to next-generation high-performance electronics, enabling breakthroughs in power conversion, RF communication, deep-ultraviolet (DUV) optoelectronics, and extreme-environment sensing. Their exceptional properties—wide bandgaps (>3 eV), ultrahigh breakdown fields (>3 MV/cm for Ga2O3, >10 MV/cm for diamond), superior thermal conductivity (diamond: ~2000 W/m·K, AlN: ~170–285 W/m·K), and radiation robustness—address critical limitations of silicon and III-V semiconductors. However, translating their potential into scalable applications hinges on mastering three interlinked frontiers: advanced material synthesis, precision surface engineering, and high-performance device realization.
This Special Issue of Molecules focuses on recent progress and remaining challenges in WBG semiconductors research, with a dedicated emphasis on synthesis methodologies, surface processing techniques, and device-level performance optimization. We invite original research articles, in-depth reviews, and perspective papers that bridge fundamental materials science with engineering practice, particularly those addressing scalability, reliability, and functional integration.
Key Topics of Interest:
- Material Synthesis and Epitaxial Growth:
- Novel growth techniques for WBG semiconductors;
- Defect control during growth;
- Heteroepitaxy and lattice matching.
- Surface Processing and Interface Engineering:
- Advanced cleaning and passivation;
- Nanostructuring and etching;
- Surface functionalization.
- Device Performance and Reliability:
- Power electronics;
- RF and microwave devices;
- Optoelectronics and sensors;
- Reliability and degradation mechanisms.
Broader Scope (Complementary Themes):
- Theoretical modeling;
- Scalable fabrication;
- Cross-cutting applications.
We warmly welcome contributions from both academic pioneers and industry leaders—whether you are advancing synthesis throughput, solving surface-related yield issues, or demonstrating record-breaking device metrics. By sharing your insights, you will accelerate the transition of WBG semiconductors from lab-scale innovation to market-ready technologies, reshaping global energy, communication, and sensing landscapes.
Submit your work now to define the future of wide-bandgap semiconductors—where material mastery meets device excellence.
Dr. Wei Hu
Guest Editor
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Molecules is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- wide-bandgap semiconductors
- gallium oxide
- Ga2O3
- diamond
- aluminum nitride
- AlN
- surface engineering
- semiconductor devices
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