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Photonics, Volume 6, Issue 3 (September 2019)
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Cover Story (view full-size image) The image shows the schematic of a λ-scale embedded active region photonic-crystal (LEAP) laser [...] Read more. The image shows the schematic of a λ-scale embedded active region photonic-crystal (LEAP) laser with current blocking trenches. An optical mode, which was calculated by the finite–differential time domain method, is overwritten on the schematic. The authors report the continuous-wave operation of such a wavelength-scale cavity laser at room temperature and demonstrate direct modulation at a bit rate up to 25 Gbit/s. Similar photonic–crystal lasers can be fabricated on Si wafers by employing oxygen plasma assisted direct bonding. The LEAP lasers on Si wafers show a threshold current as small as 40.5 μA. These results indicate the feasibility of using photonic–crystal lasers in very short distance optical communications. View this paper.