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Open AccessArticle

Optical Sideband Injection Locking Using Waveguide Based External Cavity Semiconductor Lasers for Narrow-Line, Tunable Microwave Generation

1
Islamic University of Technology, Dhaka, Gazipur 1704, Bangladesh
2
Telecommunication Engineering Group, Faculty of EEMCS, University of Twente, 7500 AE Enschede, The Netherlands
*
Author to whom correspondence should be addressed.
Photonics 2019, 6(3), 81; https://doi.org/10.3390/photonics6030081
Received: 18 June 2019 / Revised: 9 July 2019 / Accepted: 12 July 2019 / Published: 20 July 2019
(This article belongs to the Special Issue Semiconductor Laser Dynamics: Fundamentals and Applications)
The generation by optical injection locking of spectrally unadulterated microwave signals using waveguide based external cavity semiconductor lasers (WECSL) is demonstrated. A tunable frequency of 2–11 GHz, limited by the modulator’s bandwidth and the photodetector (PD), was created as proof-of-experiment by the injection locking of the two WESCLs. A single sideband (SSB) phase noise of −75 dBc/Hz from the generated carrier at 10 kHz offset and a phase noise variance at an optimum injection ratio region was 0.03 rad2, corresponding to 1.7°, were observed. The main feature of this approach is the consolidation of the upsides of microwave generation at low phase noise with a broad tuning range and the capacity of hybrid photonic integration. In addition, the injection locking characteristics were used to determine the Q factor of the complicated optical cavities with unknown inner losses. View Full-Text
Keywords: optical injection locking; microwave carrier generation; hybrid photonic integration; locking range optical injection locking; microwave carrier generation; hybrid photonic integration; locking range
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MDPI and ACS Style

Khan, M.R.H.; Hoque, M.A. Optical Sideband Injection Locking Using Waveguide Based External Cavity Semiconductor Lasers for Narrow-Line, Tunable Microwave Generation. Photonics 2019, 6, 81.

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