15 Results Found

The demand for highly sensitive and selective gas sensors has been steadily increasing, driven by applications in various fields such as environmental monitoring, healthcare, and industrial safety. In this context, ternary alloy indium aluminum nitri...

The influence of structural configurations of indium aluminum nitride (InAlN) nanospirals, grown by reactive magnetron sputter epitaxy, on the transformation of light polarization are investigated in terms of varying structural chirality, growth temp...

Metal organic chemical vapor deposition was used to grow N-polar In_0.63Al_0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp₂Mg between 0 and 130 nmol/min, reaching a Cp₂Mg/III ratio of 8.3 × 10⁻³. The grain stru...

This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum ta...

The InAlN/GaN HEMT has been identified as a promising alternative to conventional AlGaN/GaN HEMT due to its enhanced polarization effect contributing to higher 2DEG in the GaN channel. However, the InAlN barrier usually suffers from high leakage and...

In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great...

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material...

An InAlN/GaN heterostructure has been successfully grown on GaN/sapphire and AlN/sapphire substrate by metal organic chemical vapor deposition. The whole epitaxial quality has been confirmed through X-ray diffraction, while some corresponding micro-s...

The sensing mechanism of InAlN/GaN high electron mobility transistors (HEMTs) is investigated systematically by numerical simulation and theoretical analysis. In detail, the influence of additional surface charge on device performance and the depende...

An enhancement of the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) is demonstrated by the incorporation of post bis(trifluoromethane) sulfonamide (TFSI) treatment. The surface treatment of TFSI solution results i...

The nearly lattice-matched In_xGa_1−xN/In_yAl_1−yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique. The band-gap energy of In_xGa_1−xN QW in photoluminescence measurement...

Ternary wurtzite In_0.5Al_0.5N films and coatings are promising candidates for microelectronic or optoelectronic devices due to their excellent physical and chemical properties. However, as a universal and non-negligible phenomenon, in-plane strain and...

We have experimentally investigated the impact of vertical and lateral scaling on low-field electron mobility (µ) in InAlN/GaN high-electron-mobility transistors (HEMTs). It is found that µ reduces as InAlN barrier (T_B) and gate length (L...

This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O₂ + 15 W BCl₃ was chosen as the optimal recipe. The optim...

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In_0.17Al_0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The result...