- Article
Memory Properties of Zr-Doped ZrO2 MOS-like Capacitor
- Catalin Palade,
- Adrian Slav,
- Ionel Stavarache,
- Valentin Adrian Maraloiu,
- Catalin Negrila and
- Magdalena Lidia Ciurea
The high-k-based MOS-like capacitors are a promising approach for the domain of non-volatile memory devices, which currently is limited by SiO2 technology and cannot face the rapid downsizing of the electronic device trend. In this paper, we prepare...

