- Article
Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate
- Shuai Li,
- Jun Luo and
- Tianchun Ye
Detailed investigations of the pre-oxidation phosphorus implantation process are required to increase the oxidation rate in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. This study focuses on the SiO2/SiC interface characteristics of pre-oxidati...

