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Dear Colleagues,

In recent years, quantum materials have emerged concept across diverse fields of science and engineering. Quantum materials are a promising and broad class of materials that feature optical and electronic properties that can be engineered through their composition and crystal structure, such as quantum dots, quantum rods, quantum wells, etc. From a material and photophysics perspective, exciting opportunities remain in the understanding and harnessing of electrons in highly confined materials. In addition, photonic devices are components for creating, manipulating, or detecting light, such as laser diodes, light-emitting diodes, solar or photovoltaic cells, displays, optical amplifiers, etc. Therefore, “quantum materials” developed for photonic device applications could drive the commercialization of display and lighting applications and provide promising developments in the related fields

Prof. Dr. Chun-Feng Lai
Guest Editor

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Keywords

quantum dots
quantum rods
quantum wells
luminescent materials
quantum materials

Published Papers (3 papers)

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Research

Open AccessArticle

Submicron-Size Emitters of the 1.2–1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate

Ivan Melnichenko

Eduard Moiseev

Natalia Kryzhanovskaya

and

Nanomaterials 2022, 12(23), 4213; https://doi.org/10.3390/nano12234213 - 27 Nov 2022

Viewed by 627

Abstract

We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach based on selective area growth and driven by a molten alloy in metal–organic vapor epitaxy method. This approach provides the selective-area synthesis of the ordered emitters arrays on Si substrates. The obtained InP/InAsP/InP nanostructures have a submicron size. The individual InP/InAsP/InP nanostructures were investigated by photoluminescence spectroscopy at room temperature. The tuning of the emission line in the spectral range from 1200 nm to 1550 nm was obtained depending on the growth parameters. These results provide a path for the growth on Si(100) substrate of position-controlled heterojunctions based on InAs_1−xP_x for nanoscale optical devices operating at the telecom band. Full article

(This article belongs to the Special Issue Quantum Materials for Photonic Devices)

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Open AccessEditor’s ChoiceArticle

Cascade Förster Resonance Energy Transfer Studies for Enhancement of Light Harvesting on Dye-Sensitized Solar Cells

Mulugeta Tesema Efa

Jheng-Chang Huang

and

Toyoko Imae

Nanomaterials 2022, 12(22), 4085; https://doi.org/10.3390/nano12224085 - 20 Nov 2022

Viewed by 624

Abstract

This work reports cascade Förster resonance energy transfer (FRET)-based n-type (ZnO) and p-type (NiO) dye-sensitized solar cells (DSSCs), discussing approaches to enhance their overall performance. Although DSSCs suffer from poorer performance than other solar cells, the use of composites with carbon dot (Cdot) can enhance the power conversion efficiency (PCE) of DSSCs. However, further improvements are demanded through molecular design to stimulate DSSCs. Here, a photosensitized system based on a cascade FRET was induced alongside the conventional photosensitizer dye (N719). To N719 in a DSSC is transferred the energy cascaded through donor fluorescence materials (pyrene, 3-acetyl-7-N,N-diethyl-coumarin or coumarin and acridine orange), and this process enhances the light-harvesting properties of the sensitizers in the DSSC across a broad region of the solar spectrum. PCE values of 10.7 and 11.3% were achieved for ZnO/Cdot and NiO/Cdot DSSCs, respectively. These high PCE values result from the energy transfer among multi-photosensitizers (cascade FRET fluorophores, N719, and Cdot). Moreover, Cdot can play a role in intensifying the adsorption of dyes and discouraging charge recombination on the semiconductor. The present results raise expectations that a significant improvement in photovoltaic performance can be attained of DSSCs exploiting the cascade FRET photonics phenomenon. Full article

(This article belongs to the Special Issue Quantum Materials for Photonic Devices)

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Open AccessArticle

Structural Optimization of Vertically-Stacked White LEDs with a Yellow Phosphor Plate and a Red Quantum-Dot Film

Seung Chan Hong

and

Jae-Hyeon Ko

Nanomaterials 2022, 12(16), 2846; https://doi.org/10.3390/nano12162846 - 18 Aug 2022

Viewed by 532

Abstract

A remote-type white light-emitting diode (LED) consisting of a red quantum-dot (QD) film and a yellow phosphor plate was studied by both experiment and optical simulation. The sequence of the two color-conversion films had a substantial effect on the color-rendering properties of the vertically-stacked white LED, and the optimized configuration exhibited a high color rendering index of more than 90 thanks to the enhanced red component via the QD film. For the design of high-power white LED devices of a remote type, it was necessary to locate the color-conversion films below the diffuser plate to remove the substantial color dispersion depending on the viewing angle. The present study shows that high power and high color-rendering white LED devices can be realized in terms of two vertically-stacked color-conversion materials, which would provide long-term stability due to the remote design. Full article

(This article belongs to the Special Issue Quantum Materials for Photonic Devices)

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