Nanomaterials, Volume 12, Issue 19
2022 October-1 - 289 articles
Cover Story: This study presents novel semiconductor thin films based in copper-arsenic-sulfide obtained directly from local raw materials extracted from mines in the Portuguese region of the Iberian Pyrite Belt. The films are deposited via radio frequency magnetron co-sputtering, using a commercial Cu target together with a natural Cu-As-S target. The use of two targets results in stoichiometry gradients within each film, showing a transition from amorphous copper-arsenic-sulfide compounds to crystalline djurleite (Cu31S16). The bandgap values of copper-arsenic-sulfide range between 2.50 and 2.65 eV, indicating a promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices. View this paper - Issues are regarded as officially published after their release is announced to the table of contents alert mailing list .
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