Advances in Micro/Nano-Fabricated GaN-Based Semiconductor Devices: Materials, Processing, and Applications

Dear Colleagues,

GaN-based wide-bandgap semiconductors have attracted considerable interest over the past two decades due to their unique characteristics compared to Si and GaAs. Remarkable progress has been made in the development of micro/nano-fabricated GaN-based discrete devices, including GaN-based optoelectronic and electronic devices, such as LEDs, LDs, PDs, HEMTs, MOSFETs, and power diodes. Moreover, high-performance GaN-based devices have been widely used in the fields of consumer electronics, industry, clean energy, and national defense, and will be very beneficial in building a low-carbon society.

This Special Issue aims to collect high-quality research articles that present recent advances in micro/nano-fabricated GaN-based devices focusing on materials, processing, and applications.

In this Special Issue, original research articles and reviews are welcome. The topics of interest include, but are not limited to, the following:

1. Optoelectronic devices;
2. Electronic devices;
3. Material characterizations;
4. Device physics;
5. Device reliability.

We look forward to receiving your contributions.

Dr. Lei Li
Guest Editor

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