Advances in III-Nitride Semiconductors: Materials, Devices, and Applications

Dear Colleagues,

Gallium Nitride (GaN) semiconductors represent a transformative technology platform, driving advances in high-efficiency power conversion, high-frequency communications, and next-generation optoelectronics. With superior material properties such as a wide bandgap, high critical electric field, and outstanding electron mobility, GaN can enable devices to operate at higher voltages, frequencies, and temperatures than conventional silicon-based technologies. This Special Issue, titled “Advances in III-Nitride Semiconductors: Materials, Devices, and Applications,” aims to capture cutting-edge research and innovation across the full spectrum of GaN technology—from advanced material synthesis and precision processing to novel device architectures and system-level integration.

Despite remarkable progress, the realization of high-performance, reliable, and scalable GaN-based solutions faces several key challenges. These include the need for high-quality epitaxial growth on native and heterogeneous substrates, defect control at interfaces and within bulk materials, thermal management under high-power-density operation, and the development of precision manufacturing techniques such as laser-based ultrafine processing for device patterning and trimming. Furthermore, the integration of GaN with emerging materials such as two-dimensional layers offers new opportunities for heterostructure engineering, yet also introduces complexity in material compatibility and process integration.

This Special Issue focuses on presenting recent breakthroughs and forward-looking approaches that address these challenges across three interconnected themes:

1. Materials: This includes high-quality epitaxial growth of GaN on various substrates, defect engineering, substrate technologies, laser ultrafine processing for micromachining and doping, and integration with 2D materials;
2. Devices: This covers innovations in HEMTs, vertical transistors, RF amplifiers, Schottky diodes, LEDs, laser diodes, and sensors;
3. Applications: This emphasizes implementations in power electronics, 5G/6G communications, automotive systems, renewable energy conversion, ultraviolet photonics, and ruggedized electronics.

The Special Issue will provide support to the existing literature by highlighting emerging trends such as GaN-on-Si and GaN-on-SiC epitaxy for cost-effective scaling, monolithic integration with CMOS or other compound semiconductors, artificial intelligence-assisted device modeling and fabrication, and sustainable manufacturing processes. Contributions that bridge theoretical insight, experimental validation, and application-oriented development are particularly encouraged.

Topics of interest include, but are not limited to, the following:

• High-quality epitaxial growth of GaN (MOCVD, MBE, and hydride VPE);
• Native substrates and heterogeneous integration;
• Defect characterization and reduction techniques;
• Laser ultrafine processing and micromachining of GaN;
• Two-dimensional material integration with GaN heterostructures;
• High-electron-mobility transistors (HEMTs) for power and RF;
• Vertical GaN power devices;
• GaN-based optoelectronic devices: LEDs, lasers, and photodetectors;
• Thermal management and reliability physics;
• Packaging and module integration;
• GaN in power converters, inverters, and fast chargers;
• RF GaN for 5G/6G and satellite communications;
• Automotive and aerospace applications;
• Wide-bandgap device modeling and simulation;
• Sustainable and scalable manufacturing processes.

Dr. Zitong Wu
Dr. Fangzhi Li
Dr. Peng Yi
Guest Editors

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