- Article
Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers
- Haiting Xie,
- Guochao Liu,
- Lei Zhang,
- Yan Zhou and
- Chengyuan Dong
The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:...

