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19 Results Found

  • Article
  • Open Access
3 Citations
1,900 Views
18 Pages

Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis

  • Dongwook Kim,
  • Hyeonju Lee,
  • Kadir Ejderha,
  • Youngjun Yun,
  • Jin-Hyuk Bae and
  • Jaehoon Park

21 November 2023

The density of donor-like state distributions in solution-processed indium–zinc-oxide (IZO) thin-film transistors (TFTs) is thoroughly analyzed using photon energy irradiation. This study focuses on quantitatively calculating the distribution o...

  • Article
  • Open Access
17 Citations
4,892 Views
10 Pages

11 October 2020

We demonstrate the effect of the sub-gap density of states (DOS) on electrical characteristics in amorphous indium-gallium-zinc (IGZO) thin-film transistors (TFTs). Numerical analysis based on a two-dimensional device simulator Atlas controlled the s...

  • Communication
  • Open Access
1 Citations
3,057 Views
15 Pages

25 December 2023

Ultraviolet (UV) photodetectors are key devices required in the industrial, military, space, environmental, and biological fields. The Schottky barrier (SB)-MOSFET, with its high hole and electron barrier, and given its extremely low dark current, ha...

  • Article
  • Open Access
5 Citations
3,544 Views
13 Pages

12 December 2020

In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout). The short-circuit current density (JSC) and open-circui...

  • Article
  • Open Access
20 Citations
8,137 Views
9 Pages

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

  • Je-Hyuk Kim,
  • Jun Tae Jang,
  • Jong-Ho Bae,
  • Sung-Jin Choi,
  • Dong Myong Kim,
  • Changwook Kim,
  • Yoon Kim and
  • Dae Hwan Kim

19 March 2021

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron tr...

  • Article
  • Open Access
14 Citations
6,170 Views
12 Pages

Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

  • Alex C. Tseng,
  • David Lynall,
  • Igor Savelyev,
  • Marina Blumin,
  • Shiliang Wang and
  • Harry E. Ruda

16 July 2017

Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of...

  • Article
  • Open Access
1,559 Views
11 Pages

Stark Effect for Donors in Rolled-Up Quantum Well

  • Luis Francisco Garcia Russi,
  • Ilia D. Mikhailov,
  • Ruthber Antonio Escorcia Caballero,
  • Jose Sierra Ortega and
  • Gene Elizabeth Escorcia Salas

24 June 2023

We calculate energies of shallow donors confined in a rolled-up quantum well in the presence of the electric field by solving numerically the Schrödinger equation in natural curvilinear coordinates. It is found that the curves of density of stat...

  • Article
  • Open Access
3 Citations
3,938 Views
8 Pages

21 January 2021

AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (A...

  • Feature Paper
  • Article
  • Open Access
28 Citations
5,667 Views
17 Pages

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

  • P. Vigneshwara Raja,
  • Nandha Kumar Subramani,
  • Florent Gaillard,
  • Mohamed Bouslama,
  • Raphaël Sommet and
  • Jean-Christophe Nallatamby

13 December 2021

The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization i...

  • Article
  • Open Access
14 Citations
4,310 Views
12 Pages

4 February 2021

The self-association of phosphonic acids with general formula RP(O)(OH)2 in solution state remains largely unexplored. The general understanding is that such molecules form multiple intermolecular hydrogen bonds, but the stoichiometry of self-associa...

  • Article
  • Open Access
685 Views
12 Pages

Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell

  • Kyeong Min Kim,
  • In Man Kang,
  • Jae Hwa Seo,
  • Young Jun Yoon and
  • Kibeom Kim

24 October 2025

In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation...

  • Article
  • Open Access
3 Citations
2,296 Views
11 Pages

DFT Insight to Ag2O Modified InN as SF6-N2 Mixture Decomposition Components Detector

  • Haibo Dong,
  • Wenjun Li,
  • Muhammad Junaid,
  • Zhuo Lu,
  • Hao Luo and
  • Weihu Sun

5 August 2022

In gas-insulated switchgear (GIS), partial discharge (PD) can be monitored by detecting sulfur hexafluoride-nitrogen (SF6-N2) decomposition components. In this paper, silver oxide (Ag2O) modification was introduced to improve the gas-sensing properti...

  • Article
  • Open Access
1,134 Views
16 Pages

4 May 2025

Triboelectric nanogenerators (TENGs) are ideal for meeting the global demand for sustainable energy in energy harvesting and wearable electronics. While biomaterials like polysaccharides are well studied in TENGs, the potential of polyphenols and the...

  • Article
  • Open Access
2 Citations
4,018 Views
10 Pages

Resolving Site-Specific Energy Levels of Small-Molecule Donor-Acceptor Heterostructures Close to Metal Contacts

  • Amani Benhnia,
  • Shinta Watanabe,
  • Rouzhaji Tuerhong,
  • Masato Nakaya,
  • Jun Onoe and
  • Jean-Pierre Bucher

20 June 2021

The active material of optoelectronic devices must accommodate for contacts which serve to collect or inject the charge carriers. It is the purpose of this work to find out to which extent properties of organic optoelectronic layers change close to m...

  • Article
  • Open Access
2 Citations
2,740 Views
24 Pages

24 June 2023

We synthesized a series of new antimony(III) compounds by reaction of Sb(OEt)3 with organic ligands of the type E(CH2-CH2-OH)2, with E = NH, NMe, O, S, Se, and Te. The synthesized compounds have the general composition [E(CH2-CH2-O)2]Sb(OEt). For com...

  • Review
  • Open Access
41 Citations
9,227 Views
23 Pages

How Far Can One Push the Noble Gases Towards Bonding?: A Personal Account

  • Ranajit Saha,
  • Gourhari Jana,
  • Sudip Pan,
  • Gabriel Merino and
  • Pratim Kumar Chattaraj

13 August 2019

Noble gases (Ngs) are the least reactive elements in the periodic table towards chemical bond formation when compared with other elements because of their completely filled valence electronic configuration. Very often, extreme conditions like low tem...

  • Article
  • Open Access
2 Citations
2,284 Views
20 Pages

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

  • Aneta Masłowska,
  • Dominika M. Kochanowska,
  • Adrian Sulich,
  • Jaroslaw Z. Domagala,
  • Marcin Dopierała,
  • Michał Kochański,
  • Michał Szot,
  • Witold Chromiński and
  • Andrzej Mycielski

6 January 2024

This study explores the suitability of (Cd,Mn)Te and (Cd,Mn)(Te,Se) as room-temperature X-ray and gamma-ray detector materials, grown using the Bridgman method. The investigation compares their crystal structure, mechanical and optical properties, an...

  • Article
  • Open Access
11 Citations
5,393 Views
19 Pages

10 November 2017

Nanodiamond particles form agglomerates in the dry powder state and this poses limitation to the accessibility of their diamond-like core thus dramatically impacting their technological advancement. In this work, we report de-agglomeration of nanodia...

  • Article
  • Open Access
653 Views
21 Pages

31 July 2025

Using density functional theory (M06-2X-D3/def2-TZVP), we investigated the 1,2-addition reactions of NH3 with a series of heavy imine analogues, G13=P-Rea (where G13 denotes a Group 13 element; Rea = reactant), featuring a mixed G13–P–Ga...