The increasing market demand for high-power and high-frequency applications necessitates the development of highly reliable Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs). While GaN offers superior performance and efficiency over tr...
This paper presents a reliability study of a conventional 650 V SiC planar MOSFET subjected to pulsed HTRB (High-Temperature Reverse Bias) stress and negative HTGB (High-Temperature Gate Bias) stress defined by a TCAD static simulation showing the el...
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact...
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silv...
High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK...
Gate-oxide degradation in silicon carbide (SiC) metal oxide–semiconductor field-effect transistors (MOSFETs) is a significant concern. Consequently, several methods have been developed to monitor the aging degree. In this article, a temperature...