GaN-Based Materials and Devices: Research and Applications, 2nd Edition
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 30 June 2026 | Viewed by 10
Special Issue Editors
Interests: AlInGaN semiconductor materials; quantum wells/dots; optoelectronic devices; epitaxial growth; performance characterization
Special Issues, Collections and Topics in MDPI journals
Interests: semiconductor materials; semiconductor devices; solar cells; light-emitting diodes; photodetectors
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Wurtzite III-nitrides semiconductor materials, represented by GaN, have been widely used in high-frequency, high-power, and optoelectronic devices due to their excellent electrical and optical properties. For example, their superior electron mobility and wide bandgap make them highly promising candidates for high-frequency and high-power electronic devices. Furthermore, their direct and tunable bandgap have made them attractive for various optoelectronic applications, such as light-emitting diodes (LEDs), laser diodes (LDs), sensors, and photovoltaic cells. However, the potential of GaN-based devices is still far from being fully developed. The challenges exist in many aspects, such as the poor material quality, unstable fabrication process, and thermal management. Therefore, by leveraging the intriguing properties of (Al,In)GaN compound semiconductors, researchers and engineers may develop devices with improved performance, benefiting various aspects of our daily lives.
This Special Issue, titled "GaN-based Materials and Devices: Research and Applications", of the Journal Micromachines aims to present recent advantages in the design, growth, fabrication, characterization, and simulation of GaN-based compound semiconductors, as well as their related electronic and optoelectronic devices. The scope of this Special Issue includes, but is not limited to, the following:
- Epitaxial growth, fabrication, and characterization techniques for state-of-the-art AlInGaN alloys and their semiconductor heterostructures;
- Research on the physical, chemical, electronic, and optical properties of GaN-based materials and devices for various applications;
- Novel concepts for device structure design;
- Advanced simulation or modeling for GaN-based electronic and optoelectronic devices.
We look forward to receiving your submissions to this Special Issue.
Dr. Wei Liu
Dr. Kun Wang
Guest Editors
Manuscript Submission Information
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Keywords
- group III-nitrides semiconductors
- epitaxial growth and fabrication
- Al(In)GaN heterostructure
- polarization and piezoelectric effect
- nanostructures for wide bandgap materials
- RF and power devices
- display and illumination applications
- novel design concepts
- device simulation
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