Semiconductor Nanostructures: Growth, Characterization, and Applications

Dear Colleagues,

Since the invention of semiconductor quantum wells by Esaki and Tsu in the 1970s, semiconductor nanostructures have evolved from scientific curiosities to means of probing the fundamentals of quantum mechanics, and more recently into building blocks for several different types of semiconductor devices, some of them already well established in the market. In a nanostructure, the important changes in many physical properties with respect to the bulk material are due to the quantum confinement of the carriers, which occurs when the size of the structures becomes comparable to the De Broglie wavelength of the carriers. If the confinement is produced in one, two, or three dimensions, different low-dimensional semiconductors are obtained: quantum wells (2D), 2D materials such as transition metal dichalcogenides, semiconductor nanotubes (1D) such as carbon or boron nitride nanotubes, quantum wires (1D), and quantum dots (0D).

In this Special Issue, we are interested in papers, both theoretical and experimental, related to all aspects connected with semiconductor nanostructures: growth and fabrication, optical, magnetic, and transport properties, and the multitude of their applications in many fields (photonics, spintronics, LEDs, lasers, sensing, quantum information and telecommunication technologies, optoelectronics, photovoltaics, etc.). Particular attention will be devoted to the contributions focused on showing unsolved and stimulating problems, in order to animate the scientific debate and the semiconductor community to address these challenges for the advancement of science.

Dr. Francesco Biccari
Guest Editor

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