Special Issue "Metal-Insulator Transition"
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (30 June 2017).
Interests: transition-metal oxides; metal–insulator transition; charge– orbital ordering; strong correlations; magnetism; multiferroic materials; 2D materials; electron–phonon superconductors; topological insulators/semimetals/superconductors; thermoelectric materials; thin films, nano-structures; surface systems
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Metal-insulator transition, characterized by an abrupt change in the electrical conductivity from a metallic to an insulating phase, is an important phenomenon, widely observed in various condensed-matter systems. It is frequently found in transition-metal oxides and semiconductors, though it can also be found in emergent materials, such as two-dimensional and topological materials. Because of the huge resistivity changes, even over tens of orders of magnitude, metal-insulator transition, not only shows great importance in fundamental physics and material research, but also provides great potentials in nanotechnology. These transitions can be manipulated by tuning various ambient parameters, such as pressure, doping, strain, and so on. For two-dimensional layered systems, there are extra degrees of freedom to achieve the metal-insulator transition by controlling the number of layers and/or shaping the layer edges. Intrinsic parameters, such as the strong electron-electron correlation and the spin-orbit coupling strength, play a crucial role in band gap formation in transition-metal oxides and topological materials, respectively. In the former case, the insulating phase, caused by the correlation effects, is categorized as Mott insulators, while, in the latter case, the strong spin-orbit coupling strength may lead to the metallic topological states in topological insulators and semiconductors. As such, this Special Issue is dedicated to achieve a better understanding on the metal-insulator transitions in all kinds of materials and nanotechnology applications.
Prof. Dr. Horng-Tay Jeng
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
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- Metal-insulator transition
- transition-metal oxides
- 2-dimensional materials
- topological materials
- strong electron-electron correlation
- spin-orbit coupling
- Mott insulators
- topological insulators
- topological semiconductors