Progress in Optical Characterization of Semiconductor Nanomaterials and Devices

Dear Colleagues,

Advanced optical characterization techniques are powerful contactless tools able to probe semiconductor (nano)material and device properties. When correlated to microscopy, spectroscopic techniques provide impressive results at the nanoscale, not only to the fundamental understanding of structural and optical properties of nanostructures, but also insight into device limitations. This Special Issue will cover the latest achievements and challenges of optical techniques in order to study semiconductor (nano)materials and devices.

Topics covered include but are not limited to:

• Photoluminescence, ionoluminescence, spectroscopic ellipsometry, absorption, Fourier-transform infrared spectroscopy (FTIR), Raman and surface/tip-enhanced Raman spectroscopy (SERS, TERS), scanning near-field optical microscopy (nano-FTIR, nano-THz spectroscopy);
• Cathodoluminescence, scanning and transmission electron microscopy, energy-dispersive x-ray spectroscopy;
• Photocurrent, electroluminescence, electron beam induced current;
• III-N (InN, GaN, AlN), oxide (Ga₂O₃, NiO₂, ZnO), III-V (GaAs, InP, InAs) semiconductors (nanowires, quantum dots, heterostructures), 2D materials (2D transition metal dichalcogenides, MXenes) and devices (solid-state emitters, photonics, plasmonics, spintronics, photovoltaics, transistors, thermoelectrics, batteries, supercapacitors, sensors applications);
• Theory and simulation.

Dr. Nabiha Ben Sedrine
Guest Editor

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