Advanced Crystals: Integrating Doping Strategies, Interface Control, and Numerical Simulations
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: 20 April 2026 | Viewed by 6
Special Issue Editors
Interests: crystal growth; wide-bandgap semiconductor; GaN crystal; AlN crystal; perovskite crystal
Special Issues, Collections and Topics in MDPI journals
Interests: energy storage; crystal growth; wide bandgap semiconductor; gallium nitride (gan); Aluminium nitride (AlN)
Special Issue Information
Dear Colleagues,
This Special Issue focuses on the advanced study of crystalline materials, emphasizing the integration of doping, interface control, and numerical simulation in growth processes. Advanced crystalline materials, such as Gallium Nitride (GaN), are prominent wide-bandgap semiconductors distinguished by their high breakdown voltage and enhanced electron mobility. These materials possess remarkable optical and electrical properties, making them ideal for use in an array of applications including lasers and high-voltage, high-frequency power electronic devices. Their potential applications span solid-state lighting, data storage, image display, ultraviolet detection, utilization in new-energy vehicles, and integration into communication technologies.
We invite submissions that explore the intricate physical and chemical phenomena involved in both vapor- and liquid-phase growth of advanced crystalline materials. We encourage theoretical and experimental studies that delve into the interplay among doping, interface engineering, and numerical simulations during the growth processes.
Furthermore, characterization techniques for assessing crystal quality and properties will also be highlighted. By synthesizing theoretical and experimental approaches, this Special Issue aims to advance the understanding of crystal growth and develop strategies for producing high-quality crystalline materials essential for next-generation technologies. We welcome original research articles and comprehensive reviews that align with these themes.
Dr. Lei Zhang
Guest Editor
Dr. Songyang Lv
Guest Editor Assistant
Manuscript Submission Information
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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- crystal growth
- vapor phase growth
- liquid phase growth
- doping
- crystalline surfaces
- crystalline interface
- crystallization mechanisms
- characterization techniques of crystal
- numerical simulation of crystal
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