Advances in III-V Integration Materials and Devices

Dear Colleagues,

Numerous III-V material-based devices have emerged in the past decade. Such devices have shown promising characteristics for energy-saving applications, such as very high speed and high power at high frequencies. Further devices, such as InGaAs FinFETs, are compatible with the established complementary metal oxide semiconductor (CMOS) process for low-power logic applications. For example, InAs HEMT devices have demonstrated a cut-off frequency of 800 GHz with potential device applications at THz. In addition, high bandgap and high mobility GaN HEMT can be used for power amplifiers for mobile communication (5G) and SATCOM (millimeter wave band).  High voltage GaN-HEMTs are gaining momentum for industrial power electronics  applications. These III-V semiconductor devices improve the system  performance because of their unique properties such as low effective mass, high mobility, direct bandgap and high saturation velocity. Integration of different III-V compound semiconductors (GaN, AlGaN, GaAs, InGaAs, etc.) with silicon (Si) microelectronics covers a wide range of applications by removing the limitations of silicon technology.

Fundamental aspects of new materials and heterostructure integration will be explored,  including the crystal quality, interface abruptness, surface morphology, strain and defects.  Large mismatched epilayers on different substrates will be explored. Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) growth techniques are widely used for heterogeneous integration using different buffer platforms. Development of advanced node devices and special application devices require accurate control of processing steps such as, passivation, etching, surface treatment, e-beam patterning, metal and high-K deposition.  Critical process technologies are the key for the device development.

This Special Issue will address recent development in III-V integration materials and devices. Manuscripts from this issue will cover III-V material growth by different techniques, work on selective area epitaxy, nanowire and nanostructures, crystal structure control, III-V FinFET, III-V GAA FET, GaN-HEMT. Applications for digital, analog, power and RF, terahertz are welcome.

Prof. Dr. Edward Yi Chang
Guest Editor

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