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Advanced Materials, Structures, and Technologies for Thin-Film Light-Emitting Diodes

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: 10 September 2025 | Viewed by 1258

Special Issue Editors


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Guest Editor
ENEA—Italian National Agency for New Technologies, Energy and Sustainable Economic Development, Brindisi, Italy
Interests: optoelectronic devices; energy electrochemical devices

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Guest Editor
Institute of Nanotechnology—CNR NANOTEC, Lecce, Italy
Interests: optoelectronics; chromogenic devices; energy saving
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Special Issue Information

Dear Colleagues,

Thin-film light-emitting devices (LEDs), such as quantum dot LEDs (QLEDs), perovskite LEDs (PeLEDs), and organic/hybrid light-emitting devices (OLEDs/HLED), have been attracting significant attention due to their huge potential in display and lighting applications. Although thin-film LEDs have several advantages, such as compatibility with flexible substrates, wet deposition techniques, and low cost, there are still performance limitations due to different physical processes related to charge imbalance, limited carrier mobility, bimolecular quenching processes, and exciton dissociation induced by heat or an electric field.

In this context, different topics are of interest to researchers in optimizing device performance and reducing environmental impact and costs. These include, but are not limited to, the following:

  • The development of high-performance, low-cost, and biocompatible emissive materials;
  • The development of new materials for efficient charge injection and transport;
  • New device configurations;
  • The study of interface phenomena between layers;
  • The development of innovative low-cost and scalable manufacturing processes.

Our aim for this Special Issue is to collect research papers and reviews on the latest advances in the development of new materials, interface engineering, device physics, and manufacturing, in order to improve performance and reduce costs in thin-film LEDs.

Dr. Carmela Tania Prontera
Dr. Marco Pugliese
Guest Editors

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Keywords

  • thin-film LEDs
  • LEDs
  • quantum dots
  • perovskites
  • organic materials
  • interfaces
  • semiconductors
  • OLEDs

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Published Papers (3 papers)

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Research

11 pages, 1625 KiB  
Article
Optimization of Electron Transport Layer Inkjet Printing Towards Fully Solution-Processable OLEDs
by Riccardo Manfredi, Carmela Tania Prontera, Fabrizio Mariano, Marco Pugliese, Antonio Maggiore, Alessandra Zizzari, Marco Cinquino, Iolena Tarantini, Giuseppe Gigli and Vincenzo Maiorano
Materials 2025, 18(14), 3231; https://doi.org/10.3390/ma18143231 - 9 Jul 2025
Viewed by 272
Abstract
The fabrication of high-performance organic optoelectronic devices using solution-based techniques, in particular inkjet printing, is both a desirable and challenging goal. Organic light-emitting diodes (OLEDs) are multilayer devices that have demonstrated great potential in display applications, with ongoing efforts aimed at extending their [...] Read more.
The fabrication of high-performance organic optoelectronic devices using solution-based techniques, in particular inkjet printing, is both a desirable and challenging goal. Organic light-emitting diodes (OLEDs) are multilayer devices that have demonstrated great potential in display applications, with ongoing efforts aimed at extending their use to the lighting sector. A key objective in this context is the reduction in production costs, for which printing techniques offer a promising pathway. The main obstacle to fully printed OLEDs lies in the difficulty of depositing new layers onto pre-existing ones while maintaining high film quality and avoiding damage to the underlying layers. In a bottom-emitting OLED, the electron transport layer (ETL) is the final organic layer to be deposited, making its printing particularly challenging, a process for which only a few successful examples have been reported. In this work, we report on the optimization of a 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)-based ink formulation for ETL printing on an emitting layer composed of 5,10-Bis(4-(3,6-di-tert-butyl-9H-carbazol-9-yl)-2,6-dimethylphenyl)-5,10-dihydroboranthrene (tBuCzDBA). A specific ratio of methanol to diethyl ether was identified as the most suitable for printing the ETL without compromising the integrity of the underlying layer. The printed ETL was successfully integrated into an OLED device, which exhibited a maximum current efficiency of 6.8 cd/A and a peak luminance of about 8700 cd/m2. These results represent a significant step toward the development of a fully printed OLED architecture. Full article
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14 pages, 3500 KiB  
Article
Probing Phase Transitions and Interfacial Reorganization in TAPC/CBP/BPhen Organic Light-Emitting Diode Stacks by In Situ Ellipsometry
by Ilze Aulika, Patricija Paulsone, Sven Oras, Jelena Butikova, Margarita Anna Zommere, Elina Laizane and Aivars Vembris
Materials 2025, 18(10), 2261; https://doi.org/10.3390/ma18102261 - 13 May 2025
Viewed by 398
Abstract
The thermal behavior of a three-layer structure—glass/ITO/TAPC/CBP/BPhen—in an OLED system was investigated using in situ spectroscopic ellipsometry during controlled heating from room temperature to 120 °C over 60 min, simulating the ageing process and analyzing degradation kinetics. Variations in Ψ and Δ spectra [...] Read more.
The thermal behavior of a three-layer structure—glass/ITO/TAPC/CBP/BPhen—in an OLED system was investigated using in situ spectroscopic ellipsometry during controlled heating from room temperature to 120 °C over 60 min, simulating the ageing process and analyzing degradation kinetics. Variations in Ψ and Δ spectra were observed across the entire 0.7–5.9 eV spectral range, with five distinct anomalies, particularly in the UV region. An anomaly at approximately 66 °C was attributed to the glass transition temperature Tg of BPhen, while another two at around 82 °C and at around 112 °C corresponded to the first-order phase transition of TAPC and Tg of CBP, respectively. The origins of the remaining anomalies at 91 °C and 112 °C were explored in this study, with a focus on interphase layer formation and morphological changes that emerge during heating. These findings provide insights into the stability of OLEDs under thermal stress. Full article
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11 pages, 4413 KiB  
Communication
Photoluminescence and Crystal-Field Analysis of Reddish CaYAl3O7: Eu3+ Phosphors for White LEDs
by Zhaoyu Li, Da Yi, Tianpei Xu, Yong Ao and Weiqing Yang
Materials 2025, 18(7), 1578; https://doi.org/10.3390/ma18071578 - 31 Mar 2025
Viewed by 310
Abstract
Red melilite structure CaY1−xAl3O7: Eux (x = 0.04–0.24) phosphors for white LEDs were synthesized through a straightforward solid-state reaction process. These phosphors exhibit efficient excitation under near-ultraviolet light at 398 nm (7F [...] Read more.
Red melilite structure CaY1−xAl3O7: Eux (x = 0.04–0.24) phosphors for white LEDs were synthesized through a straightforward solid-state reaction process. These phosphors exhibit efficient excitation under near-ultraviolet light at 398 nm (7F05L6), producing the desired emission peak at 622 nm from the transitions of 5D07F2. The Eu doping concentration was also optimized as x = 0.16. The complete 3003 × 3003 energy matrix was constructed based on an effective Hamiltonian including both free-ion and crystal-field interactions within a complete diagonalization method (CDM). Eighteen experimental fluorescent spectra for Eu3+ ions at the Y3+ site of CaYAl3O7 crystal were quantitatively identified with high accuracy through fitting calculations. The fitting values are in reasonable agreement with the experimental results, thereby showcasing the efficacy of the CDM in probing luminescent phosphors for white LEDs. Full article
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