Special Issue "Selected Papers from the International Electron Devices & Materials Symposium 2021 (IEDMS 2021)"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: closed (31 May 2022) | Viewed by 2511

Special Issue Editors

Prof. Dr. Wei-Chou Hsu
E-Mail Website
Guest Editor
Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Interests: III-V RF/power-switching devices; LED/OLED; pervaskite photovoltaic devices; MMIC design
Prof. Dr. Yon-Hua Tzeng
E-Mail Website
Guest Editor
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan City, Taiwan
Interests: nanomaterials; nanotechnology; sensors; diamond; drug delivery vehicles; semiconductor technology
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Prof. Dr. Shoou-Jinn Chang
E-Mail Website
Guest Editor
Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Interests: optical and electronic devices; semi-conductive materials; nanotechnology
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Meng-Hsueh Chiang
E-Mail Website
Guest Editor
Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Interests: semiconductor device physics; semiconductor device simulation; compact circuit modeling for 6T-SRAM; compact device modeling for FinFET, GAAFET and TFT; compact device modeling for RRAM and the application of neural networks
Dr. Sheng-Po Chang
E-Mail Website
Guest Editor
Institute of Microelectronics & Department of Electronic Engineering, Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan
Interests: oxide thin-film transistors; advanced memory; biosensors; phototransistors; thin films; optical sensors; wide bandgap semiconductor; low-dimensional semiconductors; semiconductor devices; high-k dielectric materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues, 

IEDMS 2021 is the 26th International Electron Devices and Materials Symposium sponsored by The Electronics Devices and Materials Association and National Cheng Kung University. This conference offers an annual platform for international scientists, engineers, and researchers to present the latest research results, ideas, developments, and applications in electron devices and materials. IEDMS 2021 will be hosted by National Cheng Kung University from 18 to 19 November 2021 in Tainan City, Taiwan. The themes of this conference cover materials and devices including compound semiconductors, novel materials, nano and 2D materials, Si-based processes, photonics, and sensors. Original high-quality papers related to these themes are welcomed, including theories, design, modeling, simulation, reliability, fabrication, integration, and applications in electronic relative fields. All accepted abstracts will be published in the conference proceedings. Selected papers will be recommended to related SCI journals for a Special Issue publication, such as Electronics. Topics of interest for this Special Issue include but are not limited to:

  • Compound semiconductor materials and devices;
  • Novel materials including 2D, nanotubes, nanosheet-based materials, and related applications;
  • Si-based processing, devices, and integration, including Si, SiC, SiGe, Ge-based technology;
  • Photonic materials/devices;
  • Novel device concepts and applications such as flexible electronics;
  • Integrated solid state sensors for physical, chemical, and biomedical detection;
  • Device simulation and modeling.

Prof. Dr. Wei-Chou Hsu
Prof. Yon-Hua Tzeng
Prof. Dr. Shoou-Jinn Chang
Prof. Dr. Meng-Hsueh Chiang
Dr. Sheng-Po Chang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Compound semiconductor materials and devices
  • Novel materials and applications
  • Semiconductor devices
  • Si-based processing, devices, and integration
  • Hetero integration
  • Photonic materials and devices
  • Reliability of semiconductor devices
  • Novel device concept and applications
  • System application
  • Power electronics
  • Micro- and nanotechnology

Published Papers (3 papers)

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Research

Article
Investigation of Achieving Ultrasonic Haptic Feedback Using Piezoelectric Micromachined Ultrasonic Transducer
Electronics 2022, 11(14), 2131; https://doi.org/10.3390/electronics11142131 - 07 Jul 2022
Viewed by 409
Abstract
Ultrasound haptics is a contactless tactile feedback method that creates a tactile sensation by focusing high-intensity ultrasound on human skin. Although air-coupled ultrasound transducers have been applied to commercial products, the existing models are too bulky to be integrated into consumer electronics. Therefore, [...] Read more.
Ultrasound haptics is a contactless tactile feedback method that creates a tactile sensation by focusing high-intensity ultrasound on human skin. Although air-coupled ultrasound transducers have been applied to commercial products, the existing models are too bulky to be integrated into consumer electronics. Therefore, this study proposes a piezoelectric micromachined ultrasonic transducer (pMUT) with a small size and low power consumption to replace traditional transducers. The proposed pMUT has a resonance frequency of 40 kHz and a radius designed through the circular plate model and finite element model. To achieve better performance, lead zirconate titanate was selected as the piezoelectric layer and fabricated via RF sputtering. The cavity of the pMUT was formed by releasing a circular membrane with deep reactive ion etching. The resonance frequency of the pMUT was 32.9 kHz, which was close to the simulation result. The acoustic pressure of a single pMUT was 0.227 Pa at 70 Vpp. This study has successfully demonstrated a pMUT platform, including the optimized design procedures, characterization techniques, and fabrication process, as well as showing the potential of pMUT arrays for ultrasound haptics applications. Full article
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Article
ZnO Nanorods as Antireflection Layers in Metal-Insulator-Semiconductor Solar Cells
Electronics 2022, 11(13), 2068; https://doi.org/10.3390/electronics11132068 - 01 Jul 2022
Cited by 1 | Viewed by 456
Abstract
One of the most promising techniques for manufacturing low-cost solar cells is a solution processing method. In this study, it is proposed that solution-grown ZnO nanorods (NRs) are used as antireflection coatings on metal-insulator-semiconductor (MIS) solar cells with sol-gel SiO2. Except [...] Read more.
One of the most promising techniques for manufacturing low-cost solar cells is a solution processing method. In this study, it is proposed that solution-grown ZnO nanorods (NRs) are used as antireflection coatings on metal-insulator-semiconductor (MIS) solar cells with sol-gel SiO2. Except Al electrodes prepared by thermal evaporation, no other vacuum process was utilized during fabrication. The ZnO NRs were produced with a hydrothermal method and suppressed Fresnel reflection. With the solution-grown ZnO NRs, it was observed the average reflectance of the MIS solar cell decreased from 38.7% to 15.8%, and the short circuit density (JSC) increased from 5.22 mA/cm2 to 6.71 mA/cm2 (28.4% enhancement). Meanwhile, the open circuit voltage (VOC) was improved from 0.39 V to 0.47 V owing to a passivation effect. The MIS solar cell with the ZnO NRs exhibited a 35.5% efficiency enhancement compared to that without ZnO NRs. The performance improvement in MIS solar cells with ZnO NRs could be due to multiple reflections of an incident light between the vertically arranged NRs, and then light coupling into the cell. The results show a potential application of ZnO NRs for the performance enhancement of MIS solar cells. Full article
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Article
The Impact of an Extended Gate Field Plate on the DC and RF Characteristics of a Junctionless Thin-Film Transistor
Electronics 2022, 11(12), 1886; https://doi.org/10.3390/electronics11121886 - 15 Jun 2022
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Abstract
In this work, conventional and drain offset junctionless (JL) finlike thin-film transistors (FinTFTs) with and without extended gate field plate (E-GFP) are fabricated. Drain offset JL FinTFTs showed a higher breakdown voltage than that of the conventional one. By extending the GFP over [...] Read more.
In this work, conventional and drain offset junctionless (JL) finlike thin-film transistors (FinTFTs) with and without extended gate field plate (E-GFP) are fabricated. Drain offset JL FinTFTs showed a higher breakdown voltage than that of the conventional one. By extending the GFP over the drain offset region, holes were generated on the surface of the drain offset region that reduce drain resistance. Therefore, the drain offset JL FinTFT with E-GFP exhibited better on-current, breakdown, and high-frequency characteristics than the one without E-GFP. Results also show that all the noise spectral densities of various JL FinTFTs follow a 1/f trend and were similar in the studied frequency range. Full article
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