Advances in Thin Film Transistors: Properties and Applications, 2nd Edition

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Engineering for Energy Harvesting, Conversion, and Storage".

Deadline for manuscript submissions: closed (20 April 2024) | Viewed by 1978

Special Issue Editors


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Guest Editor
Institute of Microelectronics & Department of Electronic Engineering, Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan
Interests: oxide thin-film transistors; advanced memory; biosensors; phototransistors; thin films; optical sensors; wide bandgap semiconductor; low-dimensional semiconductors; semiconductor devices; high-k dielectric materials
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Co-Guest Editor
Department of Mechanical Engineering, Southern Taiwan University of Science and Technology, Tainan 701, Taiwan
Interests: thin films; metal materials; material analysis; photovoltaic ribbon; fine metal wires; secondary ion batteries
Special Issues, Collections and Topics in MDPI journals

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Co-Guest Editor
Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University, Tainan 710, Taiwan
Interests: thin-film phototransistors; resistive random access memory; biosensors; biomemory; optical sensors; wide bandgap semiconductor; semiconductor devices; organic light-emitting diode; led package

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Co-Guest Editor
Institute of Microelectronics & Department of Electronic Engineering, National Cheng Kung University, Tainan, Taiwan
Interests: organic thin-film transistors; ferroelectric memory elements; resistive random access memory circuit component design; biomemory; synaptic memory element design; optical sensors; gas sensor

Special Issue Information

Dear Colleagues,

Following the successful first edition, we would like to invite you to submit your work to this Special Issue, “Advances in Thin Film Transistors: Properties and Applications Volume II”. Recently, transparent oxide semiconductors (TOSs) have been the object of extensive research in various connected fields. Owing to their advantages of high mobility, good transparency, and ideal uniformity, TOSs are more suitable for the application of thin-film transistors (TFTs) than conventional Si TFTs. In addition, the features of a low-temperature process and their compatibility with flexible electronics enable TOSs to become the mainstream channel materials in next-generation flat panel displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light-emitting diodes (AMOLEDs). Both In2O3 (~3.7 eV) and Ga2O3 (~4.9 eV) with wide energy band gaps possess excellent transparency. By adjusting to each stoichiometry, indium-based transparent conducting oxide materials have been widely used in flat panel displays and optoelectronic devices, among other applications. Thin-film transistors (TFTs) have been in extensive use as on/off switch and current driving devices for various applications, ever since the concept of TFTs was reported. This Special Issue of Coatings, “Advances in Thin Film Transistors: Properties and Applications Volume II”, aims to cover recent advances in TFT technologies.

Dr. Sheng-Po Chang
Dr. Kuan-Jen Chen
Dr. Chih-Chiang Yang
Dr. Ke-Jing Lee
Guest Editors

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Keywords

  • thin-film transistors
  • organic thin-film transistors
  • oxide semiconductor materials
  • crystal growth of semiconductor materials and modeling
  • high-k dielectric
  • high-dielectric-constant materials
  • device physics
  • heterointegration
  • reliability (positive/negative voltage bias, light illumination, temperature, etc.)
  • oxide-based application (biosensors, photo sensors, gas sensors, pressure sensors, memory, etc.)

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Published Papers (1 paper)

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Research

13 pages, 12320 KiB  
Article
Effects of Niobium Carbide Additions on Ni-Based Superalloys: A Study on Microstructures and Cutting-Wear Characteristics through Plasma-Transferred-Arc-Assisted Deposition
by Kuan-Jen Chen and Hung-Mao Lin
Coatings 2024, 14(2), 167; https://doi.org/10.3390/coatings14020167 - 28 Jan 2024
Cited by 1 | Viewed by 1336
Abstract
This study applied plasma transferred arc (PTA) welding to fabricate hard cladding layers by using nickel-based superalloy (NCR7) and niobium carbide (NbC) powders as filler material. The resultant composite claddings were coated onto ductile iron and then analyzed to understand the effect of [...] Read more.
This study applied plasma transferred arc (PTA) welding to fabricate hard cladding layers by using nickel-based superalloy (NCR7) and niobium carbide (NbC) powders as filler material. The resultant composite claddings were coated onto ductile iron and then analyzed to understand the effect of different quantities of NbC on the solidification structures of the cladding layers and on the characteristics of the interface between the cladding layers and the ductile iron. Cutting tests were also conducted to assess the morphology and mechanism of flank wear on PTA NbC/NCR7 composite cladding tools. The results revealed that the cladding specimens’ microstructures comprised a mixture of dendrites and interdendritic eutectics along with a considerable quantity of carbides (MC, M7C3, and M23C6) scattered within the γ-Ni matrix. Incorporating considerable NbC carbide enhanced the claddings’ surface hardness, but it had a limited effect on improving the flank wear on the turning tools. The flank wear on the composite cladding tools intensified as the NbC content was increased. The wear behavior, defined by brittle fractures and stripped NbC particles, led to a decline in turning tool performance. Accordingly, the Ni-based alloy composite cladding with larger NbC particles appears more suitable for sliding or erosion applications under normal stress conditions. Full article
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