Wide Bandgap Semiconductors: Growth, Characterization, Devices and System Applications

A special issue of Coatings (ISSN 2079-6412).

Deadline for manuscript submissions: closed (31 May 2022) | Viewed by 17096

Special Issue Editor


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Guest Editor
Institute of Microelectronics & Department of Electronic Engineering, Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan
Interests: oxide thin-film transistors; advanced memory; biosensors; phototransistors; thin films; optical sensors; wide bandgap semiconductor; low-dimensional semiconductors; semiconductor devices; high-k dielectric materials
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Special Issue Information

Dear Colleagues,

We would like to invite you to submit your work to this Special Issue on “Wide Bandgap Semiconductors: Growth, Characterization, Devices and System Applications”. Wide bandgap semiconductors are rapidly emerging as disruptive materials for a wide range of applications. Even though some products are already available on the market, efforts are still needed to improve the performance and reliability of the devices, as well as to identify novel materials and structures toward widening the possible application fields. In order to showcase the most recent advancements, we are requesting submissions for a Special Issue on wide bandgap semiconductors and their applications. Topics of interest include but are not limited to:

  • Crystal growth: Bulk growth, epitaxial growth, doping and point defects, growth methods, and related technology;
  • Characterization: Optical and electrical properties, structural analysis, and theory and simulation;
  • Devices: Visible, UV, and white LEDs, micro LEDs, laser diodes, solar cells, detectors, transistors, diodes, high-power and high-frequency devices, device processing, contacts, and reliability;
  • System applications of wide bandgap semiconductors: Power supplies and modules, electric chargers, motor drive and control, hybrid and/or electric vehicles, and related utilities.

Dr. Sheng-Po Chang
Guest Editor

Manuscript Submission Information

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Keywords

  • wide bandgap semiconductors
  • crystal growth
  • devices
  • device physics
  • hetero integration
  • optical and electrical properties
  • reliability
  • oxide-based application
  • system application
  • power electronics
  • micro- and nanotechnology

Published Papers (6 papers)

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Research

8 pages, 1754 KiB  
Article
Investigation of Multi-Mesa-Channel-Structured AlGaN/GaN MOSHEMTs with SiO2 Gate Oxide Layer
by Jhang-Jie Jian, Hsin-Ying Lee, Edward-Yi Chang and Ching-Ting Lee
Coatings 2021, 11(12), 1494; https://doi.org/10.3390/coatings11121494 - 3 Dec 2021
Viewed by 2034
Abstract
In this study, an electron-beam lithography system was employed to pattern 80-nm-wide and 980-nm-spaced multi-mesa-channel for fabricating AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). Since the structure of multi-mesa-channel could enhance gate control capabilities and reduce the self-heating effect in the channel, the [...] Read more.
In this study, an electron-beam lithography system was employed to pattern 80-nm-wide and 980-nm-spaced multi-mesa-channel for fabricating AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). Since the structure of multi-mesa-channel could enhance gate control capabilities and reduce the self-heating effect in the channel, the performance of the MOSHEMTs could be obviously improved. The direct current performance metrics of the multi-mesa-channel-structured MOSHEMTs, such as a saturation drain-source current of 929 mA/mm, maximum extrinsic transconductance of 223 mS/mm, and on-resistance of 2.1 Ω-mm, were much better than those of the planar-structured MOSHEMTs. Moreover, the threshold voltage of the multi-mesa-channel-structured MOSHEMTs shifted toward positive voltage from −2.6 to −0.6 V, which was attributed to the better gate control capability. Moreover, the multi-mesa-channel-structured MOSHEMTs also had superior high-frequency and low-frequency noise performance. A low Hooge’s coefficient of 1.17 × 10−6 was obtained. Full article
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10 pages, 5290 KiB  
Article
Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors
by Yifan Jia, Shengjun Sun, Xiangtai Liu, Qin Lu, Ke Qin, Shaoqing Wang, Yunhe Guan, Haifeng Chen, Xiaoyan Tang and Yuming Zhang
Coatings 2021, 11(12), 1449; https://doi.org/10.3390/coatings11121449 - 26 Nov 2021
Viewed by 1617
Abstract
Hydrogen-nitrogen hybrid passivation treatment for growing high-property gate oxide films by high-temperature wet oxidation, with short-time NO POA, is proposed and demonstrated. Secondary ion mass spectroscopy (SIMS) measurements show that the proposed method causes hydrogen and appropriate nitrogen atoms to accumulate in Gaussian-like [...] Read more.
Hydrogen-nitrogen hybrid passivation treatment for growing high-property gate oxide films by high-temperature wet oxidation, with short-time NO POA, is proposed and demonstrated. Secondary ion mass spectroscopy (SIMS) measurements show that the proposed method causes hydrogen and appropriate nitrogen atoms to accumulate in Gaussian-like distributions near the SiO2/SiC interface. Moreover, the hydrogen atoms are also incorporated into the grown SiO2 layer, with a concentration of approximately 1 × 1019 cm−3. The conductance characteristics indicate that the induced hydrogen and nitrogen passivation atoms near the interface can effectively reduce the density of interface traps and near-interface traps. The current-voltage (I-V), X-ray photoelectron spectroscopy (XPS), and time-dependent bias stress (TDBS) with ultraviolet light (UVL) irradiation results demonstrate that the grown SiO2 film with the incorporated hydrogen passivation atoms can effectively reduce the density of oxide electron traps, leading to the barrier height being improved and the leakage current being reduced. Full article
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19 pages, 7315 KiB  
Article
Study the Passivation Characteristics of Microwave Annealing Applied to APALD Deposited Al2O3 Thin Film
by Yu-Chun Huang, Ricky Wenkuei Chuang, Keh-Moh Lin and Tsung-Chieh Wu
Coatings 2021, 11(12), 1450; https://doi.org/10.3390/coatings11121450 - 25 Nov 2021
Cited by 1 | Viewed by 1896
Abstract
In this study, a self-developed atmospheric pressure atomic layer deposition (APALD) system is used to deposit Al2O3 passivation film, along with the use of precursor combinations of Al(CH3)3/H2O to improve its passivation characteristics through [...] Read more.
In this study, a self-developed atmospheric pressure atomic layer deposition (APALD) system is used to deposit Al2O3 passivation film, along with the use of precursor combinations of Al(CH3)3/H2O to improve its passivation characteristics through a short-time microwave post-annealing process. Comparing the unannealed and microwave-annealed samples whose temperature is controlled at 200–500 °C, APALD non-vacuum deposited film can be realized with a higher film deposition rate, which is beneficial for increasing the production throughput while at the same time reducing the operating cost of vacuum equipment at hand. Since the microwave has a greater penetration depth during the process, the resultant thermal energy provided can be spread out evenly to the entire wafer, thereby achieving the effect of rapid annealing. The film thickness is subsequently analyzed by TEM, whereas the chemical composition is verified by EDS and XPS. The negative fixed charge and interface trap density are analyzed by the C-V measurement method. Finally, the three major indicators of τeff, SRV, and IVoc are analyzed by QSSPC to duly verify the excellent passivation performance. Full article
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14 pages, 4239 KiB  
Article
Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells
by Yu-Chun Huang and Ricky Wenkuei Chuang
Coatings 2021, 11(9), 1052; https://doi.org/10.3390/coatings11091052 - 31 Aug 2021
Cited by 5 | Viewed by 5934
Abstract
In this study, Atomic Layer Deposition (ALD) equipment was used to deposit Al2O3 film on a p-type silicon wafer, trimethylaluminum (TMA) and H2O were used as precursor materials, and then the post-annealing process was conducted under atmospheric pressure. [...] Read more.
In this study, Atomic Layer Deposition (ALD) equipment was used to deposit Al2O3 film on a p-type silicon wafer, trimethylaluminum (TMA) and H2O were used as precursor materials, and then the post-annealing process was conducted under atmospheric pressure. The Al2O3 films annealed at different temperatures between 200–500 °C were compared to ascertain the effect of passivation films and to confirm the changes in film structure and thickness before and after annealing through TEM images. Furthermore, the negative fixed charge and interface defect density were analyzed using the C-V measurement method. Photo-induced carrier generation was used to measure the effective minority carrier lifetime, the implied open-circuit voltage, and the effective surface recombination velocity of the film. The carrier lifetime was found to be the longest (2181.7 μs) for Al2O3/Si post-annealed at 400 °C. Finally, with the use of VHF (40.68 MHz) plasma-enhanced chemical vapor deposition (PECVD) equipment, a silicon nitride (SiNx) film was plated as an anti-reflection layer over the front side of the wafer and as a capping layer on the back to realize a passivated emitter and rear contact (PERC) solar cell with optimal efficiency up to 21.54%. Full article
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9 pages, 2521 KiB  
Article
Fabrication and Characterization of In0.9Ga0.1O EGFET pH Sensors
by Chia-Hsun Chen, Shu-Bai Liu and Sheng-Po Chang
Coatings 2021, 11(8), 929; https://doi.org/10.3390/coatings11080929 - 3 Aug 2021
Cited by 4 | Viewed by 2114
Abstract
In this study, the In0.9Ga0.1O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the In [...] Read more.
In this study, the In0.9Ga0.1O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the In0.9Ga0.1O EGFET pH sensors were measured and analyzed in the pH value of range between 2 to 12. In the saturation region, the pH current sensitivity calculated from the linear relationship between the IDS and pH value was approximately 56.64 μA/pH corresponding to the linearity of 97.8%. In the linear region, the pH voltage sensitivity exhibited high sensitivity and linearity of 43.7 mV/pH and 96.3%, respectively. The In0.9Ga0.1O EGFET pH sensors were successfully fabricated and exhibited great linearity. The analyzed results indicated that the In0.9Ga0.1O was a robust material as a promising sensing membrane and effectively used for pH sensing detection application. Full article
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9 pages, 3629 KiB  
Article
High Stability of Liquid-Typed White Light-Emitting Diode with Zn0.8Cd0.2S White Quantum Dots
by Chin-Chuan Huang, Kuo-Hsiung Chu, Chin-Wei Sher, Chun-Liang Lin, Yan-Kuin Su, Chia-Wei Sun and Hao-Chung Kuo
Coatings 2021, 11(4), 415; https://doi.org/10.3390/coatings11040415 - 2 Apr 2021
Cited by 3 | Viewed by 2115
Abstract
In this study, we demonstrate a new design of white light-emitting diode (WLED) with high stability and luminous efficiency as well as positive aging. Colloidal ternary Zn0.8Cd0.2S (named Zn0.8) white quantum dots (WQDs) were prepared by chemical [...] Read more.
In this study, we demonstrate a new design of white light-emitting diode (WLED) with high stability and luminous efficiency as well as positive aging. Colloidal ternary Zn0.8Cd0.2S (named Zn0.8) white quantum dots (WQDs) were prepared by chemical route and dispersed in xylene, integrating them into an ultraviolet light-emitting diode (UV-LED) to form WQD-white light emitting diode (WQD-WLED). High efficiency, high color quality and excellent reliability of WQD-WLED with neutral white correlated color temperature (CCT) can be obtained. The experimental results indicate that the stability of relative luminous efficiency and color rendering index (CRI) of the WQD-WLED can reach up to 160 and 82%, respectively. Moreover, the WQD-WLED can operate more than 1000 h under 100 mA, and the quantity of WQDs in the glass package can be reduced. Full article
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