Materials, Volume 5, Issue 3

Textile scaffolds can be found in a variety of application areas in regenerative medicine and tissue engineering. In the present study we used electrostatic flocking—a well-known textile technology—to produce scaffolds for tissue engineering of bone....

In the classical theory of thermoelectricity, the performance integrals for a fully self-compatible material depend on the dimensionless figure of merit zT. Usually these integrals are evaluated for constraints z = const. and zT = const., respectivel...

Controlling monolayer Si oxide at the HfO₂/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO₂/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum...

Oriented collagen scaffolds were developed in the form of sheet, mesh and tube by arraying flow-oriented collagen string gels and dehydrating the arrayed gels. The developed collagen scaffolds can be any practical size with any direction of orientati...

A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO₃) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO₃ as compared with Hf-based high-k...

Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of high-κ gate dielectrics via higher-κ ( > 20) materials and interfacial layer (IL) scavenging techniques are reviewed. La-based higher-κ materials show aggressive...

Specialised modelling and simulation methods implementing simplified physical models are valuable generators of insight. Template-based geometric simulation is a specialised method for modelling flexible framework structures made up of rigid units. W...

Indium doped zinc oxide [ZnO:In] thin films have been deposited at 430°C on soda-lime glass substrates by the chemical spray technique, starting from zinc acetate and indium acetate. Pulverization of the solution was done by ultrasonic excitation. Th...

Interface-formation processes in atomic layer deposition (ALD) of Al₂O₃ on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al₂O₃ ALD was carried out by repeating a cycle of Al(CH₃)₃ (trimethylaluminum, TMA) adsorption and...

The research of new molecular materials able to replace classical solid materials in electronics has attracted growing attention over the past decade. Among these compounds photoswitchable Prussian blue analogues (PBA) are particularly interesting fo...

Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, th...

Lanthanum zirconate (LZO) films from water-based precursors were deposited on Ni-5%W tape by chemical solution deposition. The buffer capacity of these layers includes the prevention of Ni oxidation of the substrate and Ni penetration towards the YBC...