Next Article in Journal
Exact Solution of a Constraint Optimization Problem for the Thermoelectric Figure of Merit
Next Article in Special Issue
Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications
Previous Article in Journal
Oriented Collagen Scaffolds for Tissue Engineering
Previous Article in Special Issue
Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?
Article Menu

Export Article

Open AccessReview
Materials 2012, 5(3), 512-527;

Study of Direct-Contact HfO2/Si Interfaces

National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
Received: 27 February 2012 / Revised: 5 March 2012 / Accepted: 8 March 2012 / Published: 19 March 2012
(This article belongs to the Special Issue High-k Materials and Devices)
Full-Text   |   PDF [881 KB, uploaded 19 March 2012]   |  


Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs) but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs. View Full-Text
Keywords: MOSFET; high-k; HfO2; interface dipole; channel mobility MOSFET; high-k; HfO2; interface dipole; channel mobility

Figure 1

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Miyata, N. Study of Direct-Contact HfO2/Si Interfaces. Materials 2012, 5, 512-527.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top