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Materials 2012, 5(3), 377-384;

A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

Department of Materials Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan
Author to whom correspondence should be addressed.
Received: 19 December 2011 / Revised: 31 January 2012 / Accepted: 15 February 2012 / Published: 2 March 2012
(This article belongs to the Special Issue Low k Dielectic Materials)
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Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia by plasma-enhanced chemical vapor deposition (PECVD) followed by a procedure for tetra-ethoxyl silane (TEOS) oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs) showed that 3MS α-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH3 stretch mode in the α-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O) substituted TEOS oxide capped on 4MS α-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination. View Full-Text
Keywords: SiC(N); interface state; bonding configuration SiC(N); interface state; bonding configuration

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Chen, S.-W.; Wang, Y.-S.; Hu, S.-Y.; Lee, W.-H.; Chi, C.-C.; Wang, Y.-L. A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films. Materials 2012, 5, 377-384.

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