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Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

IBM Thomas J. Watson Research Center, Yorktown Heights, New York, NY 10598, USA
Materials 2012, 5(3), 478-500; https://doi.org/10.3390/ma5030478
Received: 29 January 2012 / Revised: 11 February 2012 / Accepted: 6 March 2012 / Published: 14 March 2012
(This article belongs to the Special Issue High-k Materials and Devices)
Current status and challenges of aggressive equivalent-oxide-thickness (EOT) scaling of high-κ gate dielectrics via higher-κ ( > 20) materials and interfacial layer (IL) scavenging techniques are reviewed. La-based higher-κ materials show aggressive EOT scaling (0.5–0.8 nm), but with effective workfunction (EWF) values suitable only for n-type field-effect-transistor (FET). Further exploration for p-type FET-compatible higher-κ materials is needed. Meanwhile, IL scavenging is a promising approach to extend Hf-based high-κ dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nm. Mobility-EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or La-silicate formation. However, extreme IL scaling (e.g., zero-IL) is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime ( < 0.5 nm) will be the key technology to satisfy both performance and reliability requirements for future CMOS devices. View Full-Text
Keywords: high-κ; metal gate; scavenging; higher-κ; EOT; MOSFET high-κ; metal gate; scavenging; higher-κ; EOT; MOSFET
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Ando, T. Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging? Materials 2012, 5, 478-500.

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