The junction temperature (Tj) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems. However, the limited temperature sensi...
Silicon carbide (SiC) power converters are increasingly used in automotive, renewable energy, and industrial applications. While reliability assessments are typically performed at either the device or system level, an integrative approach that simult...
Wide-Bandgap (WBG) semiconductors—silicon carbide (SiC) and gallium nitride (GaN)— enable high-power-density conversion, but performance is limited by where heat is generated and how it is removed. This review links device-level loss mech...
Power metal-oxide-semiconductor field-effect transistors (MOSFETs) provide numerous advantages and are widely utilized in various power circuits. The junction temperature plays a critical role in determining the reliability, performance, and operatio...
This paper presents the design, implementation, and experimental validation of a Condition Monitoring (CM) circuit for SiC-based Power Electronics Converters (PECs). The paper leverages in situ drain–source resistance (Rds,on) measurements, int...
Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of G...
The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use o...
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters’ (TSEPs) in...
This paper presents a new methodical procedure to monitor in real time the junction temperature of SiC Power MOSFET modules of parallel-connected chips utilized in machine drive systems to develop their reliability modelling and predict their lifetim...
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are critical for high-power applications like AI power supplies and robotics but face reliability challenges due to increased dynamic ON-resistance (RDS_ON) from electrical and thermomech...
This article presents a method for detecting the temperature distribution of two parallelized Silicon Carbide (SiC) MOSFETs. Two thermally sensitive electrical parameters (TSEPs), namely the on-state resistance (Rdson) and the threshold voltage (Vth)...
In this paper, an approach to determine the thermal impedance of a multi-chip silicon carbide (SiC) power module is proposed, by fusing optical measurement and multi-physics simulations. The tested power module consists of four parallel SiC metal-oxi...
Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be...
Under the operating conditions of high power and high switching frequency, an insulated gate bipolar transistor (IGBT) chip can produce relatively large power loss, causing the junction temperature to rise rapidly; consequently, the reliability of th...
When designing power electronic systems, it is crucial to correctly estimate the junction temperature of semiconductor devices, particularly power MOSFETs, under actual operating conditions. Thermal resistance is a parameter that characterizes the ab...