Fabrication, Reliability, Simulation, and Protection of Advanced Semiconductor Devices and Integrated Circuits: Enabled by Emerging Semiconductor Materials

Dear Colleagues,

This Special Issue addresses the critical intersection of emerging semiconductor materials with the full lifecycle of advanced semiconductor devices and integrated circuits (ICs)—from fabrication to long-term operational robustness. As Moore’s Law confronts physical scaling limits, materials like gallium nitride (GaN), silicon carbide (SiC) and two-dimensional (2D) materials (e.g., MoS₂, graphene) have emerged as game-changers, enabling higher efficiency, faster switching and novel functionalities. However, their integration introduces unprecedented challenges: non-ideal interfaces during fabrication, defect-mediated degradation under stress and complex multi-physics couplings that defy conventional reliability models.

We focus on bridging material innovation to practical deployment by exploring (1) advanced fabrication techniques tailored to emerging materials; (2) physics-based simulation tools to predict device lifetime and failure modes; and (3) protective strategies (e.g., passivation, thermal management) to mitigate material-specific vulnerabilities. Contributions span experimental characterization, computational modeling and case studies on power electronics, neuromorphic systems and beyond. This issue aims to foster cross-disciplinary collaboration, establishing a framework for ensuring trustworthiness in next-generation semiconductors and accelerating their industrial adoption.

Dr. Xiyuan Feng
Dr. Yunlei Zhong
Guest Editors

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