- Article
InAlGaN/GaN HEMTs at Cryogenic Temperatures
- Ezgi Dogmus,
- Riad Kabouche,
- Sylvie Lepilliet,
- Astrid Linge,
- Malek Zegaoui,
- Hichem Ben-Ammar,
- Marie-Pierre Chauvat,
- Pierre Ruterana,
- Piero Gamarra and
- Cédric Lacam
- + 2 authors
We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−...

