Next Article in Journal / Special Issue
High-k Dielectric Passivation for GaN Diode with a Field Plate Termination
Previous Article in Journal
Graphene and Two-Dimensional Materials for Optoelectronic Applications
Previous Article in Special Issue
Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation
Open AccessArticle

Gate Stability of GaN-Based HEMTs with P-Type Gate

Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy
IMEC, Kapeldreef 75, 3001 Heverlee, Belgium
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Electronics 2016, 5(2), 14;
Received: 1 February 2016 / Revised: 14 March 2016 / Accepted: 15 March 2016 / Published: 25 March 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress experiment, the devices show a stable behavior up to VGS = 10 V, and a catastrophic failure happened for higher voltages; (iii) failure consists in the creation of shunt paths under the gate, of which the position can be identified by electroluminescence (EL) measurements; (iv) the EL spectra emitted by the devices consists of a broad emission band, centered around 500–550 nm, related to the yellow-luminescence of GaN; and (v) when submitted to a constant voltage stress tests, the p-GaN gate can show a time-dependent failure, and the time to failure follows a Weibull distribution. View Full-Text
Keywords: gallium nitride; high electron mobility transistor; degradation; step stress gallium nitride; high electron mobility transistor; degradation; step stress
Show Figures

Figure 1

MDPI and ACS Style

Meneghini, M.; Rossetto, I.; Rizzato, V.; Stoffels, S.; Van Hove, M.; Posthuma, N.; Wu, T.-L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E. Gate Stability of GaN-Based HEMTs with P-Type Gate. Electronics 2016, 5, 14.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Search more from Scilit
Back to TopTop