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Electronics 2016, 5(2), 14;

Gate Stability of GaN-Based HEMTs with P-Type Gate

Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy
IMEC, Kapeldreef 75, 3001 Heverlee, Belgium
Author to whom correspondence should be addressed.
Academic Editor: Farid Medjdoub
Received: 1 February 2016 / Revised: 14 March 2016 / Accepted: 15 March 2016 / Published: 25 March 2016
(This article belongs to the Special Issue Gallium Nitride Electronics)
Full-Text   |   PDF [2288 KB, uploaded 25 March 2016]   |  


This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress experiment, the devices show a stable behavior up to VGS = 10 V, and a catastrophic failure happened for higher voltages; (iii) failure consists in the creation of shunt paths under the gate, of which the position can be identified by electroluminescence (EL) measurements; (iv) the EL spectra emitted by the devices consists of a broad emission band, centered around 500–550 nm, related to the yellow-luminescence of GaN; and (v) when submitted to a constant voltage stress tests, the p-GaN gate can show a time-dependent failure, and the time to failure follows a Weibull distribution. View Full-Text
Keywords: gallium nitride; high electron mobility transistor; degradation; step stress gallium nitride; high electron mobility transistor; degradation; step stress

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Meneghini, M.; Rossetto, I.; Rizzato, V.; Stoffels, S.; Van Hove, M.; Posthuma, N.; Wu, T.-L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E. Gate Stability of GaN-Based HEMTs with P-Type Gate. Electronics 2016, 5, 14.

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