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Micromachines, Volume 13, Issue 6
June 2022 - 165 articles
Cover Story: It is hotly pursued to combine the complementary metrics of amorphous InGaZnO (a-IGZO) and poly-Si thin-film transistors (TFTs), while a-IGZO is naturally vulnerable to the hydrogen inevitably supplied from poly-Si transistor. The proposed hydrogen-resistant short-channel a-IGZO TFT enables the direct 3D stacking of a-IGZO on poly-Si, dubbed metal-oxide-on-Si (MOOS) TFT. Its comprehensive performance metrics and high integration density blaze a trail for the high-pixel-density VR/AR/MR displays. View this paper
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Micromachines - ISSN 2072-666X