III-V Semiconductor Optoelectronics: Materials and Devices (Second Edition)
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".
Deadline for manuscript submissions: 20 August 2025 | Viewed by 74
Special Issue Editors
Interests: silicon photonics integration; quantum dot lasers; III-V heteroepitaxial growth on Si; III-V optoelectronic materials
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
III-V semiconductor materials, such as GaN, GaAs, InAs, InP, and GaSb, possess excellent optical properties and normally act as a gain medium of light sources with large-scale emission wavelengths from the visible to mid-infrared bands. Tremendeous progress has been made in the field of III-V light sources and detectors, such as near-infrared InAs quantum dot-based lasers and mid-infrared GaSb-based quantum cascade lasers, among many others. In addition, III-V materials (InAs, InSb, etc.) have much higher electron mobilities than Si, with broad applications in high-speed electronic and radio-frequency (RF) devices, including field-effect transistors (FETs) and high-electron-mobility transistors (HEMTs).
The heterogenous integration and direct growth of III-V materials mark a fundamental step towards next-generation optoelectronics. Many methods, including metal–organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and heterogeneous bonding, have been developed to achieve high-quality III-V functional structures, such as quantum well structures, quantum dots, and nanostructures. Many device structures have been designed and fabricated based on these III-V semiconductor materials and are being brought into various applications, such as optical communications, quantum information, microwave photonics, solar cells, and optical ranging.
This Special Issue of “III-V Semiconductor Optoelectronics: Materials and Devices” aims to collect the most recent advances in III-V optoelectronic materials and devices in different fields of interest. We kindly invite researchers worldwide to showcase their research results on this topic; research articles, reviews, and comments are all welcome.
Dr. Wenqi Wei
Prof. Dr. Tiangui You
Guest Editors
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Keywords
- epitaxial growth
- III-V light sources
- optoelectronic properties
- nonlinear photonics
- nonlinear photonics
- sensors
- optoelectronic devices
- nanostructures
- solar cell
- quantum devices
- heterogeneous integration
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