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Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors,...
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Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: 20 November 2025 | Viewed by 3560

Special Issue Editors

Prof. Dr. Peng Chen

E-Mail Website
Guest Editor
1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
2. Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China
Interests: semiconductor optoelectronics; plasmon photonics; semiconductor micro/nano structure; solid-state electronics and power electronic devices; III-nitrides on Si substrates
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Zhizhong Chen

E-Mail Website
Guest Editor
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Interests: III-nitride device physics; LED; GaN-based micro-nano light-emitting structure; GaN-based micro-nano device; LED light source for regulating the biological rhythm
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Following the remarkable success of the first edition of the Special Issue titled “Recent Advances in III-Nitride Semiconductors” (https://www.mdpi.com/journal/crystals/special_issues/nitride_semiconductors_2 ), we are pleased to announce the second edition of this Special Issue, titled “Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors”.

The group-III nitrides are typical wide-bandgap semiconductors. The interest in group-III nitrides lies in their irreplaceable and efficient blue-UV luminescence capability. Recently, more correlated wide-bandgap semiconductor materials, including Ga2O3, NiO, diamond, LiNbO3, and AlScN , have been at the forefront of research. Nitrides, along with those wide bandgap materials, have become key materials for the next generation of novel optoelectronic and electronic technologies. Recent progress in III-nitride semiconductors and the correlated wide bandgap semiconductor material quality and device design relies on well-mastered techniques of material growth and the formation of desired structures with their combinations. This process offers a high possibility of creating high-performance and diverse functional devices. III-nitride semiconductors and related wide-bandgap semiconductors are also promising candidates for next-generation power electronic applications because of their outstanding material properties, but their potential is far from being realized, and many material properties and device mechanisms still require investigation.

Therefore, we invite researchers to contribute to this Special Issue titled “Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors”, which covers a broad spectrum of topics, extending from the study of wide-bandgap semiconductor materials, micro/nano structures, and novel functional devices to new applications in frontier fields.

The topics include, but are not limited to, the following subjects:

  • Growth of III-nitride semiconductors and correlated wide-bandgap semiconductor materials and micro/nanostructures;
  • Characterization of these materials and the heterostructures;
  • Novel devices, including emission, detection, and power devices;
  • Application and integration of these materials and novel devices in novel electronics and photonics.

Prof. Dr. Peng Chen
Prof. Dr. Zhizhong Chen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nitrides
  • GaN
  • Ga2O3
  • NiO
  • diamond
  • AlScN
  • heterostructures
  • epitaxy
  • electro-optics devices
  • micro-electronics devices
  • power devices
  • integrated circuits and modules
  • photonic crystal enhanced light-matter interaction
  • photonic crystal and plasmonics

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Related Special Issue

Published Papers (3 papers)

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Research

12 pages, 3122 KiB  
Article
Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics
by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier and Julien Buckley
Crystals 2025, 15(1), 56; https://doi.org/10.3390/cryst15010056 - 8 Jan 2025
Viewed by 592
Abstract
This study investigated the low contact resistivity and Schottky barrier characteristics in p-GaN by modifying the thickness and doping levels of a p-InGaN cap layer. A comparative analysis with highly doped p-InGaN revealed the key mechanisms contributing to low-resistance contacts. Atomic force microscopy [...] Read more.
This study investigated the low contact resistivity and Schottky barrier characteristics in p-GaN by modifying the thickness and doping levels of a p-InGaN cap layer. A comparative analysis with highly doped p-InGaN revealed the key mechanisms contributing to low-resistance contacts. Atomic force microscopy inspections showed that the surface roughness depends on the doping levels and cap layer thickness, with higher doping improving the surface quality. Notably, increasing the doping concentration in the p++-InGaN cap layer significantly reduced the specific contact resistivity to 6.4 ± 0.8 × 10−6 Ω·cm2, primarily through enhanced tunneling. Current–voltage (I–V) characteristics indicated that the cap layer’s surface properties and strain-induced polarization effects influenced the Schottky barrier height and reverse current. The reduction in barrier height by approximately 0.42 eV in the p++-InGaN layer enhanced hole tunneling, further lowering the contact resistivity. Additionally, polarization-induced free charges at the metal–semiconductor interface reduced band bending, thereby enhancing carrier transport. A transition in current conduction mechanisms was also observed, shifting from recombination tunneling to space-charge-limited conduction across different voltage ranges. This research underscores the importance of doping, cap layer thickness, and polarization effects in achieving ultra-low contact resistivity, offering valuable insights for improving the performance of p-GaN-based power devices. Full article
(This article belongs to the Special Issue Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition)
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11 pages, 858 KiB  
Article
Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates
by Markus Pristovsek, Itsuki Furuhashi, Xu Yang, Chengzhi Zhang and Matthew D. Smith
Crystals 2024, 14(9), 822; https://doi.org/10.3390/cryst14090822 - 20 Sep 2024
Viewed by 1106
Abstract
We report on 2-dimensional electron gases realized in binary N-polar GaN channels on AlN on sapphire templates grown by metal–organic vapor phase epitaxy. The measured sheet carrier density of 3.8×1013 cm−2 is very close to the theoretical value of [...] Read more.
We report on 2-dimensional electron gases realized in binary N-polar GaN channels on AlN on sapphire templates grown by metal–organic vapor phase epitaxy. The measured sheet carrier density of 3.8×1013 cm−2 is very close to the theoretical value of 3.95×1013 cm−2 due to the low carbon and oxygen background doping in the N-polar GaN if grown with triethyl-gallium. By inserting an intermediate AlN transition layer, room temperature mobilities in 5 nm channels up to 100 cm2/Vs were realized, probably limited by dislocations and oxygen background in N-polar AlN. Thicker channels of 8 nm or more showed relaxation and thus much lower mobilities. Full article
(This article belongs to the Special Issue Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition)
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11 pages, 46096 KiB  
Article
Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N
by Emmanuel Kayede, Emre Akso, Brian Romanczyk, Nirupam Hatui, Islam Sayed, Kamruzzaman Khan, Henry Collins, Stacia Keller and Umesh K. Mishra
Crystals 2024, 14(6), 485; https://doi.org/10.3390/cryst14060485 - 22 May 2024
Viewed by 1361
Abstract
A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the etchant [...] Read more.
A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-polar unintentionally doped (UID) GaN, indicating its potential as a suitable replacement for selective dry etches in the fabrication of GaN high-electron-mobility transistors (HEMTs). The efficacy and selectivity of this etchant were confirmed through its application to a gate recess module of a deep-recess HEMT, where, despite a 228% over-etch, the 2.6 nm AlGaN etch stop layer remained intact. We also evaluated the proposed method for the selective etching of the GaN cap in the n+ regrowth process, achieving a contact resistance matching that of a BCl3/SF6 ICP process. These findings underscore the applicability and versatility of the etchant in both the electronic and photonic domains and are particularly applicable to the development of N-polar deep-recess HEMTs. Full article
(This article belongs to the Special Issue Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition)
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